Zobrazeno 1 - 10
of 135
pro vyhledávání: '"Leach, Jacob"'
Autor:
Song, Yiwen, Bhattacharyya, Arkka, Karim, Anwarul, Shoemaker, Daniel, Huang, Hsien-Lien, Roy, Saurav, McGray, Craig, Leach, Jacob H., Hwang, Jinwoo, Krishnamoorthy, Sriram, Choi, Sukwon
Ulta-wide bandgap semiconductors based on $\beta$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical chall
Externí odkaz:
http://arxiv.org/abs/2210.07417
Autor:
Hassanaly, Malik, Sitaraman, Hariswaran, Schulte, Kevin L., Ptak, Aaron J., Simon, John, Udwary, Kevin, Leach, Jacob H., Splawn, Heather
Publikováno v:
Journal of Applied Physics, Vol. 130, No. 11, pp. 115702, 2021
Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrati
Externí odkaz:
http://arxiv.org/abs/2109.11540
Autor:
Roy, Saurav, Bhattacharyya, Arkka, Ranga, Praneeth, Splawn, Heather, Leach, Jacob, Krishnamoorthy, Sriram
This paper presents vertical (001) oriented $\beta$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $\mu m$ was used to enable a punch-through (PT) field p
Externí odkaz:
http://arxiv.org/abs/2105.04413
Autor:
Chikoidze, Ekaterine, Leach, Jacob, Chi, Zeyu, von Bardeleben, Jurgen, Ballesteros, Belén, Gonçalves, Anne-Marie, Tchelidze, Tamar, Dumont, Yves, Pérez-Tomás, Amador
Publikováno v:
In Journal of Alloys and Compounds 15 January 2024 971
Autor:
Kucukgok, Bahadir, Mandia, David J., Leach, Jacob H., Evans, Keith R., Eastman, Jeffrey A., Zhou, Hua, Hryn, John, Elam, Jeffrey W., Yanguas-Gil, Angel
We report the optical, electrical, and structural properties of Si doped $\beta$-Ga$_2$O$_3$ films grown on (010)-oriented $\beta$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of magnitude f
Externí odkaz:
http://arxiv.org/abs/1906.09306
Two-dimensional MoS2 is a crystalline semiconductor with high potential for numerous technologies. Research in recent years has sought to exploit the direct band gap and high carrier mobility properties of monolayer MoS2 for functional applications.
Externí odkaz:
http://arxiv.org/abs/1811.05044
Publikováno v:
Physica Status Solidi (B); Nov2024, Vol. 261 Issue 11, p1-5, 5p
Autor:
Leach, Jacob H.
Publikováno v:
Available online at.
Thesis (Ph.D.)--Virginia Commonwealth University, 2010.
Prepared for: Dept. of Electrical Engineering. Title from title-page of electronic thesis. Bibliography: leaves 177-185.
Prepared for: Dept. of Electrical Engineering. Title from title-page of electronic thesis. Bibliography: leaves 177-185.
Externí odkaz:
http://hdl.handle.net/10156/2778
Autor:
Song, Yiwen, Zhang, Chi, Lundh, James Spencer, Huang, Hsien-Lien, Zheng, Yue, Zhang, Yingying, Park, Mingyo, Mirabito, Timothy, Beaucejour, Rossiny, Chae, Chris, McIlwaine, Nathaniel, Esteves, Giovanni, Beechem, Thomas E., Moe, Craig, Dargis, Rytis, Jones, Jeremy, Leach, Jacob H., Lavelle, Robert M., Snyder, David W., Maria, Jon-Paul
Publikováno v:
Journal of Applied Physics; 11/7/2022, Vol. 132 Issue 17, p1-15, 15p
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