Zobrazeno 1 - 10
of 723
pro vyhledávání: '"LeRoy, A. J."'
Autor:
Mahdikhany, Fateme, Driskill, Sean, Philbrick, Jeremy G., Adinehloo, Davoud, Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, LeRoy, Brian J., Monti, Oliver L. A., Perebeinos, Vasili, Kong, Tai, Schaibley, John R.
One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crysta
Externí odkaz:
http://arxiv.org/abs/2312.07326
Autor:
Habiboglu, Ali, Chandak, Yash, Khanal, Pravin, Zhou, Bowei, Eckel, Carter, Warrilow, Jacob Cutshall Kennedy, O'Brien, John, Schaibley, John R., Leroy, Brian J., Wang, Wei-Gang
Publikováno v:
J. Appl. Phys., 28 December 2023; 134 (24): 243904
Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on Si/SiO2 substra
Externí odkaz:
http://arxiv.org/abs/2211.12448
Autor:
Shanks, Daniel N., Mahdikhanysarvejahany, Fateme, Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, LeRoy, Brian J., Schaibley, John R.
Publikováno v:
Phys. Rev. B 106, L201401 (2022)
Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trapping for valleytronic applications. In this work, we use a nano-patterned graphene gate to create an e
Externí odkaz:
http://arxiv.org/abs/2206.13427
Autor:
Shanks, Daniel N., Mahdikhanysarvejahany, Fateme, Stanfill, Trevor G., Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, LeRoy, Brian J., Schaibley, John R.
Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an MoSe$_2$-WSe$_
Externí odkaz:
http://arxiv.org/abs/2203.09444
Autor:
Mahdikhanysarvejahany, Fateme, Shanks, Daniel N., Klein, Mathew, Wang, Qian, Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, Monti, Oliver L. A., LeRoy, Brian J., Schaibley, John R.
Publikováno v:
Nature Communications volume 13, Article number: 5354 (2022)
Trapped interlayer excitons (IXs) in MoSe2-WSe2 heterobilayers have generated interest for use as single quantum emitter arrays and as an opportunity to study moir\'e physics in transition metal dichalcogenide (TMD) heterostructures. IXs are spatiall
Externí odkaz:
http://arxiv.org/abs/2203.08052
Autor:
Nieken, Rachel, Roche, Anna, Mahdikhanysarvejahany, Fateme, Taniguchi, Takashi, Watanabe, Kenji, Koehler, Michael R., Mandrus, David G., Schaibley, John, LeRoy, Brian J.
Publikováno v:
APL Materials 10, 031107 (2022)
When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moir\'e potential. As the angle between the layers changes, so do the electronic properties. As the angle appro
Externí odkaz:
http://arxiv.org/abs/2201.02166
Autor:
Shanks, Daniel N., Mahdikhanysarvejahany, Fateme, Muccianti, Christine, Alfrey, Adam, Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, Yu, Hongyi, LeRoy, Brian J., Schaibley, John R.
Publikováno v:
Nano Lett. 2021
For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a long-standing goal. MoSe2-WSe2 heterostructures host spatially indirect interlayer excitons (IXs) which exhibit highly tunab
Externí odkaz:
http://arxiv.org/abs/2103.08838
Autor:
Mahdikhanysarvejahany, Fateme, Meade, Daniel N., Muccianti, Christine, Badada, Bekele H., Idi, Ithwun, Alfrey, Adam, Raglow, Sean, Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, Monti, Oliver L. A., Yu, Hongyi, LeRoy, Brian J., Schaibley, John R.
MoSe2-WSe2 heterostructures host strongly bound interlayer excitons (IXs) which exhibit bright photoluminescence (PL) when the twist-angle is near 0{\deg} or 60{\deg}. Over the past several years, there have been numerous reports on the optical respo
Externí odkaz:
http://arxiv.org/abs/2012.15348
Publikováno v:
Phys. Rev. B 102, 085429 (2020)
Using a van der Waals vertical heterostructure consisting of monolayer graphene, monolayer hBN and NbSe$_2$, we have performed local characterization of induced correlated states in different configurations. At a temperature of 4.6 K, we have shown t
Externí odkaz:
http://arxiv.org/abs/2005.05925
Publikováno v:
Phys. Rev. Research 2, 033181 (2020)
Using scanning probe microscopy and spectroscopy, we explore the spatial symmetry of the electronic wavefunctions of twisted bilayer graphene at the "magic angle" of 1.1 degrees. This small twist angle leads to a long wavelength moir\'e unit cell on
Externí odkaz:
http://arxiv.org/abs/2003.09482