Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC

Autor: Bano, N. ^{a, ⁎}, Hussain, I. ^a, Nur, O. ^a, Willander, M. ^a, Wahab, Q. ^b, Henry, A. ^b, Kwack, H.S. ^c, Le Si Dang, D. ^c

Publikováno v: In Journal of Luminescence 2010 130(6):963-968

12 - Growth of GaN-based nanorod heterostructures (core-shell) for optoelectronics and their nanocharacterization

Autor: Eymery, J. ^{1, 2, 4}, Le Si Dang, D. ^{1, 3, 4}

Publikováno v: In Modeling, Characterization and Production of Nanomaterials 2015:323-335

Spectroscopy of single non-polar GaN/AlN quatum dots as a function of temperature and electrical bias

Autor: Rol, F., Founta, S., Daudin, B., Emery, J., Gerard, Jm., Le Si Dang, D., Mariette, H., Peyrade, D., Gayral, B.

Publikováno v: ICPS 28th international conference on the physics of semiconductors
ICPS 28th international conference on the physics of semiconductors, 2006, vienne, Austria

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c7014e05816531c49cc48109de6d89ec
https://hal.archives-ouvertes.fr/hal-00395893

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The growth and rare-earth doping of GaN quantum dots on AlxGa1–xN layer by plasma-assisted molecular beam epitaxy

Autor: Hori, Y., Andreev, T., Bellet-Amalric, E., Oda, O., Le Si Dang, D., Daudin, B.

Publikováno v: Physica Status Solidi (A) - Applications and Materials Science; January 2007, Vol. 204 Issue: 1 p290-293, 4p