Morphological and Electrical Characterization of Electrically Trimmable Thin-Film Resistors

Autor: Privitera S, Le Neel O, Leung C, Dumont-Girard P, Cialdella B, Bongiorno C, Modica R

Publikováno v: I.E.E.E. transactions on electron devices 59 (2012): 3549–3554.
info:cnr-pdr/source/autori:Privitera S, Le Neel O, Leung C, Dumont-Girard P, Cialdella B, Bongiorno C, Modica R/titolo:Morphological and Electrical Characterization of Electrically Trimmable Thin-Film Resistors/doi:/rivista:I.E.E.E. transactions on electron devices/anno:2012/pagina_da:3549/pagina_a:3554/intervallo_pagine:3549–3554/volume:59

SiCr-based thin-film resistors with low temperature coefficient of resistance (TCR) have been integrated in a 0.8-mu m BiCMOS technology in a dual thin-film structure, with a heater close to the thin-film resistor. Such a structure allows modifying t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::10f42b7146c8266b79fe36d2d10239d7
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6329943

Micromachined passive magnetostatic relays for portable applications.

Autor: Min Tang, Ebin Liao, Cheng Cheng Kuo J K, Dayong Lee, Kumar, R., Yong Hean Lee, Shankar, R., Le Neel, O., Noviello, G., Italia, F.

Publikováno v: 2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS); 2010, p779-782, 4p

Subthreshold currents in submicron N and PMOS and static consumption of SRAMs circuits made in thin film SOI.

Autor: Le Neel, O., Haond, M.

Publikováno v: ESSDERC '91: 21st European Solid State Device Research Conference; 1991, p345-348, 4p

Gate Oxide Breakdown in a SOI CMOS Process Usilng MESA Isolatioon.

Autor: Haond, M., Le Neel, O., Mascarin, G., Gonchond, J. P.

Publikováno v: ESSDERC '89: 19th European Solid State Device Research Conference; 1989, p893-896, 4p

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