Evidence of Sn Adatoms Quantum Tunneling at the Sn/Si(111) Surface

Autor: Ronci F. (1), Colonna S. (1), Cricenti A. (1), Le Lay G. (2)

Publikováno v: Physical review letters
99 (2007): 166103. doi:10.1103/PhysRevLett.99.166103
info:cnr-pdr/source/autori:Ronci F. (1); Colonna S. (1); Cricenti A. (1); Le Lay G. (2)/titolo:Evidence of Sn Adatoms Quantum Tunneling at the Sn%2FSi(111) Surface/doi:10.1103%2FPhysRevLett.99.166103/rivista:Physical review letters (Print)/anno:2007/pagina_da:166103/pagina_a:/intervallo_pagine:166103/volume:99

We present a low-temperature scanning tunneling microscopy study of the alpha-Sn/Si(111) surface that demonstrates the fluctuating behavior of the Sn adatoms. The dynamical fluctuation model, successfully applied in describing the alpha-Sn/Ge(111) su

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http://www.cnr.it/prodotto/i/52151