Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Le C. Nhan"'
Publikováno v:
Electronic Journal of Differential Equations, Vol 2022, Iss 46,, Pp 1-22 (2022)
Externí odkaz:
https://doaj.org/article/ea1824b4c1bd42c59ea9ae030ef180ab
Publikováno v:
Journal of Physics D: Applied Physics. 56:135302
This work is motivated by the recent fabrication of a new four-atom-thick hexagonal polymorph from group IV monochalcogenide, so-called γ-GeSe (Lee et al 2021 Nano Lett. 21 4305). In this paper, we propose and examine the structural characteristics,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1f94823aa0aa0802d5fe997eecac7c6
https://doi.org/10.1088/1361-6463/acbe0a
https://doi.org/10.1088/1361-6463/acbe0a
Publikováno v:
Chemical Physics. 566:111797
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2349d4d854ef909635b04dd290d9d6e
https://doi.org/10.1016/j.chemphys.2022.111797
https://doi.org/10.1016/j.chemphys.2022.111797
Autor:
Chuong V. Nguyen, Huynh V. Phuc, Hamad Rahman Jappor, Le Minh Bui, Le C. Nhan, Pham C. Dinh, Le T.T. Phuong, Nguyen V. Hieu, Nguyen Q. Cuong, Bui D. Hoi, Nguyen N. Hieu, Nguyen Dinh Hien
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 111:201-205
In this study, we investigate systematically the effect of strain engineering and electric field on electronic properties of single-layer SnSe 2 using density functional theory . Our calculated results indicate that the single-layer SnSe2 is a semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ac4b71b0651813d4a025de723a759f8
https://doi.org/10.1016/j.physe.2019.03.025
https://doi.org/10.1016/j.physe.2019.03.025
Autor:
Nguyen V. Hieu, Huong Thi Thu Phung, Bin Amin, Huynh V. Phuc, Chuong V. Nguyen, Nguyen N. Hieu, Le C. Nhan, Bui D. Hoi, P.T.T. Le, Do Muoi
Publikováno v:
Chemical Physics. 519:69-73
In the present work, we consider electronic properties of WX2 (X = S, Se) monolayers under a biaxial strain e b using the first principles study. Our calculations indicate that, at equilibrium, the WS2 and WSe2 monolayers are semiconductors with a di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eabff938c640b9eb5310616da858350
https://doi.org/10.1016/j.chemphys.2018.12.004
https://doi.org/10.1016/j.chemphys.2018.12.004
Autor:
Le C. Nhan, Bui D. Hoi, Chuong V. Nguyen, Nguyen N. Hieu, Khang D. Pham, Nguyen V. Hieu, Tuan V. Vu, Huynh V. Phuc, Vo Q. Nha
Publikováno v:
Superlattices and Microstructures. 120:501-507
In the present work, using density functional theory (DFT), we investigate the influence of biaxial strain e b on electronic and optical properties of single-layer GeS. Our DFT calculations show that single-layer GeS is a semiconducting material at e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b02594b2aa2a2591ae366194bc82b845
https://doi.org/10.1016/j.spmi.2018.06.013
https://doi.org/10.1016/j.spmi.2018.06.013
Autor:
Huynh V. Phuc, D.M. Hoat, Le C. Nhan, Chuong V. Nguyen, Hien D. Tong, Le T. Hoa, Nguyen N. Hieu, Tuan V. Vu, Dat D. Vo
Publikováno v:
Superlattices and Microstructures. 142:106519
In this work, we investigate the electronic and optical properties of two configurations of haft-hydrogenated indium nitride monolayers H–InN and 2H–InN using first-principles calculations. Both H–InN and 2H–InN monolayers are semiconductors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59efd89312c9c2b7eecf65cf7529a0ff
https://doi.org/10.1016/j.spmi.2020.106519
https://doi.org/10.1016/j.spmi.2020.106519
Akademický článek
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Autor:
Chuong V. Nguyen, Le Minh Bui, Doan Quoc Khoa, Huynh V. Phuc, Nguyen N. Hieu, Vo Q. Nha, Bui D. Hoi, Nguyen V. Hieu, Le C. Nhan, Nguyen Huynh
Publikováno v:
Materials Research Express. 6:045605
In the present work, we consider the electronic properties of graphene with Kekule structure formed from two different C–C bonds in its hexagonal lattice. When the C–C bond alternation was introduced, a small band gap has been opened in the band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::292ecd3bcc0570169217e3602ee6ab85
https://doi.org/10.1088/2053-1591/aaf914
https://doi.org/10.1088/2053-1591/aaf914
Autor:
Doan Q Khoa, Chuong V Nguyen, Le M Bui, Huynh V Phuc, Bui D Hoi, Nguyen V Hieu, Vo Q Nha, Nguyen Huynh, Le C Nhan, Nguyen N Hieu
Publikováno v:
Materials Research Express; Apr2019, Vol. 6 Issue 4, p1-1, 1p