4H-silicon carbide thin junction based ultraviolet photodetectors

Autor: Biondo, S., Lazar, M., Ottaviani, L., Vervisch, W., Le Borgne, V., El Khakani, M.A., Duchaine, J., Milesi, F., Palais, O., Planson, D.

Publikováno v: In Thin Solid Films 1 November 2012 522:17-19

Pulsed KrF-laser synthesis of single-wall-carbon-nanotubes: effects of catalyst content and furnace temperature on their nanostructure and photoluminescence properties.

Autor: Le Borgne, V.¹, Aïssa, B.¹, Mohamedi, M.¹, Kim, Yoong², Endo, Morinobu², El Khakani, M.¹ elkhakani@emt.inrs.ca

Publikováno v: Journal of Nanoparticle Research. Nov2011, Vol. 13 Issue 11, p5759-5767. 9p.

4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Autor: Biondo, Stéphane, Ottaviani, Laurent, Lazar, Mihai, Planson, Dominique, Duchaine, Julian, Le Borgne, V., Khakani, M A, Milesi, Frédéric, Vervisch, Wilfried, Palais, Olivier, Torregrosa, Frank

Publikováno v: Materials Science Forum
Materials Science Forum, 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩
Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩

International audience; This paper presents a study of 4H-SiC UV photodetectors based on p + n thin junctions. Two kinds of p + layers have been implemented, aiming at studying the influence of the junction elaborated by the ion implantation process

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ea313695cea94c726db61d9207371c18
https://hal.science/hal-02275699/file/rev91.pdf

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