Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Lazhar Rachdi"'
Autor:
Benjamin Torda, Lazhar Rachdi, Asmaa Mohamed Okasha Mohamed Okasha, Pierre Saint-Cast, Marc Hofmann
Publikováno v:
AIP Advances, Vol 10, Iss 4, Pp 045331-045331-10 (2020)
Silicon oxide (SiOx) has many applications, including as a low-refractive index material. Plasma enhanced chemical vapor deposition (PECVD) processes are facile, low temperature routes to produce thin SiOx layers. A route to decrease the refractive i
Externí odkaz:
https://doaj.org/article/a3d72e3ec479475ea24c4d0c5b26bd65
Publikováno v:
Physica Scripta. 98:055614
Plasma chemical processes in H2/SiH4 discharges are critically reviewed. A model set of reactions is proposed which includes temperature and pressure-dependent reaction rates and describes SiyHx (y ≤ 3) chemistry. Using a 2D fluid plasma simulator,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1fe49697ea0e5adfdbf37f8da8e69f5
https://doi.org/10.1088/1402-4896/acc140
https://doi.org/10.1088/1402-4896/acc140
In this study, we used optical emission spectroscopy (OES) as a diagnostic tool in a Duo-Plasmaline surface-wave discharge. Argon plasma emission is recorded in order to calculate the electron density ne and the electron temperature Te in argon gas a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1549271e0cfd21bce04cb0c219fe4db5
https://publica.fraunhofer.de/handle/publica/427013
https://publica.fraunhofer.de/handle/publica/427013
Autor:
Lazhar Rachdi, Marc Hofmann
In this work, we use in-situ plasma characterization during SiNx passivation layer deposition in an industrial scale PECVD tool. Optical emission spectroscopy (OES) allows us to determine emission intensity of different species contained in plasma. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ab9255123f41ecb9ded6e1d80496d90
https://publica.fraunhofer.de/handle/publica/267985
https://publica.fraunhofer.de/handle/publica/267985
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 15:2000584
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f8e9ad66e0424844c0d0dd2a33a2920
https://doi.org/10.1002/pssr.202000584
https://doi.org/10.1002/pssr.202000584
Autor:
Pierre Saint-Cast, Benjamin Torda, Lazhar Rachdi, Marc Hofmann, Asmaa Mohamed Okasha Mohamed Okasha
Publikováno v:
AIP Advances, Vol 10, Iss 4, Pp 045331-045331-10 (2020)
Silicon oxide (SiOx) has many applications, including as a low-refractive index material. Plasma enhanced chemical vapor deposition (PECVD) processes are facile, low temperature routes to produce thin SiOx layers. A route to decrease the refractive i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1158777bfe7a2c1cf936c3ca548ff2d2
https://doi.org/10.1063/1.5142017
https://doi.org/10.1063/1.5142017