Zobrazeno 1 - 10
of 254
pro vyhledávání: '"Lazarev, M."'
Autor:
Lazarev, M.
Quantum Dots are very attractive nanostructures from an application point of view due to their unique optical properties. Optical properties and Valence Band states character was numerically investigated from the effect of nanostructure geometry and
Externí odkaz:
http://arxiv.org/abs/2301.03490
Autor:
Pavlenko, P., Kashparova, O., Teien, H.-C., Salbu, B., Eide, D.M., Oughton, D.H., Hrechaniuk, M., Levchuk, S., Lazarev, M., Kashparov, V.
Publikováno v:
In Journal of Environmental Radioactivity December 2023 270
Characterization of GPR radiation pattern in the upper and lower hemisphere (theory and experiment).
Publikováno v:
Journal of Physics: Conference Series; 2024, Vol. 2887 Issue 1, p1-4, 4p
Publikováno v:
Journal of Applied Physics; 3/7/2023, Vol. 133 Issue 9, p1-15, 15p
Akademický článek
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Autor:
Astakhov, G. V., Dzhioev, R. I., Kavokin, K. V., Korenev, V. L., Lazarev, M. V., Tkachuk, M. N., Kusrayev, Yu. G., Kiessling, T., Ossau, W., Molenkamp, L. W.
Publikováno v:
Phys. Rev. Lett. 101, 076602 (2008)
We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the differen
Externí odkaz:
http://arxiv.org/abs/0710.0246
Publikováno v:
Physical Review B 75 033317 (2007)
We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under resonant e
Externí odkaz:
http://arxiv.org/abs/cond-mat/0609349
Autor:
Dzhioev, R. I., Kavokin, K. V., Korenev, V. L., Lazarev, M. V., Poletaev, N. K., Zakharchenya, B. P., Stinaff, E. A., Gammon, D., Bracker, A. S., Ware, M. E.
We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by the Dyakono
Externí odkaz:
http://arxiv.org/abs/cond-mat/0407133
Autor:
Dzhioev, R. I., Kavokin, K. V., Korenev, V. L., Lazarev, M. V., Meltser, B. Ya., Stepanova, M. N., Zakharchenya, B. P., Gammon, D., Katzer, D. S.
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is observed in the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0208083