Zobrazeno 1 - 10
of 276
pro vyhledávání: '"Lazanu S"'
Autor:
Lazanu, I., Lazanu, S.
There exists an enormous interest for the study of very high energy domain in particle physics, both theoretically and experimentally, in the aim to construct a general theory of the fundamental constituents of matter and of their interactions. Until
Externí odkaz:
http://arxiv.org/abs/physics/0512275
Autor:
Lazanu, I., Lazanu, S.
Publikováno v:
Phys.Scripta 74 (2006) 201-207
The principal obstacle to long-time operation of silicon detectors at the highest energies in the next generation of experiments arises from bulk displacement damage which causes significant degradation of their macroscopic properties. The analysis o
Externí odkaz:
http://arxiv.org/abs/physics/0507058
Publikováno v:
In Applied Surface Science 15 January 2018 428:698-702
Autor:
Lazanu, S., Lazanu, I.
In this contribution we argue that the main discrepancies between model calculations and experimental data for leakage current after hadron irradiation could be explained considering the contributions of primary defects in silicon: vacancy, interstit
Externí odkaz:
http://arxiv.org/abs/hep-ph/0410172
Autor:
Lazanu, I., Lazanu, S.
This report is a compilation of authors' calculations of the Lindhard factors, and of the concentration of primary radiation defects per unit particle fluence in different materials for HEP uses.
Comment: 8 pages
Comment: 8 pages
Externí odkaz:
http://arxiv.org/abs/hep-ph/0301080
Autor:
Lazanu, I., Lazanu, S.
Publikováno v:
Phys.Scripta 67 (2003) 388-394
In the present paper, the phenomenological model developed by the authors in previous papers has been used to evaluate the degradation induced by hadron irradiation at the future accelerator facilities or by cosmic protons in high resistivity silicon
Externí odkaz:
http://arxiv.org/abs/hep-ph/0209086
Publikováno v:
Nucl.Instrum.Meth. A514 (2003) 9-17
In this contribution, the production of defects in radiation fields and their evolution toward equilibrium in silicon for detector uses has been modelled. In the quantitative model developed, the generation rate of primary defects is calculated start
Externí odkaz:
http://arxiv.org/abs/hep-ph/0209012
The utilisation of semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications or in medicine and industry, necessitates to obtain radiation harder materials. A sy
Externí odkaz:
http://arxiv.org/abs/physics/0006054
Autor:
Lazanu, S., Lazanu, I.
Publikováno v:
Nucl.Instrum.Meth. A462 (2001) 530-535
Starting from the general Lindhard theory describing the partition of particles energy in materials between ionisation and displacements, analytical approximate solutions have been derived, for media containing one and more atomic species, for partic
Externí odkaz:
http://arxiv.org/abs/hep-ph/9910317
Publikováno v:
Nucl.Phys.Proc.Suppl.78:683-688,1999
The energy dependence of the concentration of primary displacements induced by protons and pions in diamond has been calculated in the energy range 50 MeV - 50 GeV, in the frame of the Lindhard theory. The concentrations of primary displacements indu
Externí odkaz:
http://arxiv.org/abs/hep-ph/9904337