Výsledky vyhledávání - "Lawrence S. Melvin"

Contribution of mask roughness in stochasticity of high-NA EUV imaging

Autor: Lawrence S. Melvin, Rik Jonckheere

Publikováno v: International Conference on Extreme Ultraviolet Lithography 2021.

This paper extends the 2019 and 2020 symposium contributions clearly showing that (local) mask defects and non-local mask defects (NLMDs) act as triggers for increased stochastic failure probability on the EUV printed wafer. The present work focuses

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5aa3d8cc7ced770c5c67f45119fa66a1
https://doi.org/10.1117/12.2601897

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Panel Discussion: Mask readiness for 3nm and beyond: a mask supplier’s perspective

Autor: Tilmann Heil, Bryan S. Kasprowicz, Andrew Wall, Masashi Sunako, Lawrence S. Melvin, Emily Gallagher

Publikováno v: Photomask Technology 2021.

As EUV is adopted by more companies, the insertion strategy and timing begin to drive new mask requirements. Traditional lithography extensions employed for DUV may now appear with EUV, from ILT to PSM to aggressive use of pellicles. Looking beyond w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::99b36736cd7884db0bd5bfd18883e297
https://doi.org/10.1117/12.2618132

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Contribution of mask defectivity in stochastics of EUVL-based wafer printing

Autor: Rik Jonckheere, Lawrence S. Melvin

Publikováno v: Journal of Micro/Nanopatterning, Materials, and Metrology. 20

Two earlier publications showed that mask defectivity contributes to the stochastics of the EUVL-printed image on wafer. The present contribution gives more insights into the methodology and resist models used therein. In addition, an extended study

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ceac3479f9d2f921c1a670dee5ac3aa
https://doi.org/10.1117/1.jmm.20.2.021003

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Two-dimensional feature stochastic printing with mask deficiencies in high-NA EUV

Autor: Rik Jonckheere, Lawrence S. Melvin, Eric Hendrickx

Publikováno v: Extreme Ultraviolet (EUV) Lithography XII.

An Extreme Ultra-Violet (EUV) photo mask is a complex engineering marvel. It is integral to semiconductor manufacturing, as it holds the design layout information intended for the device. The mask complexity allows many potential points of variation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::230cde8789c79c42f9d7d470f6fa9a6f
https://doi.org/10.1117/12.2584775

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Stochastic printing behavior of non-local mask deficiencies in EUV lithography

Autor: Lawrence S. Melvin, Rik Jonckheere

Publikováno v: Extreme Ultraviolet Lithography 2020.

This paper extends the 2019 findings, that local defects on an EUV mask are trigger points for stochastic failures on the printed wafer, to a simulation study of non-local mask deficiencies. These relate to shortcomings of a larger area nature where

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::05056563e2f57074eb91f9adc1bc2944
https://doi.org/10.1117/12.2572998

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Applying stochastic simulation to study defect formation in EUV photoresists

Autor: Lawrence S. Melvin, Ulrich Welling, Yudhishthir Kandel, Zachary A. Levinson, Hironobu Taoka, Hans-Jurgen Stock, Wolfgang Demmerle

Publikováno v: Japanese Journal of Applied Physics. 61:SD1030

Extreme ultra-violet lithography lithography resolves features below 11 nm. However, photonic and atomic variations at these photon energies and dimensions lead to less than 1:109 potential stochastic defects causing device failures in stable manufac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3293a6ad169af17fad561dfda63d2e23
https://doi.org/10.35848/1347-4065/ac5b22

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