Výsledky vyhledávání - "Lawrence H. Robins"

Patterns of Ensemble Variation of the Optical Properties of ZnO Nanowires Grown with Copper and Gold Catalysts

Autor: Susie Eustis, Lawrence H. Robins, Babak Nikoobakht

Publikováno v: The Journal of Physical Chemistry C. 113:2277-2285

Understanding the source of variation of the optical properties within an ensemble of nanowires (NWs) is an important step toward fabrication of NWs with more uniform and better-controlled properties. This in turn will facilitate the development of c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::498d72810fd3cc4a0c8864d34162925c
https://doi.org/10.1021/jp808129j

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Fabrication and analysis of GaN nanorods grown by MBE

Autor: Alexana Roshko, Youn-Seon Kang, Albert V. Davydov, Igor Levin, Norman A. Sanford, C. E. Stutz, Matthew H. Gray, Alexander J. Shapiro, Lawrence H. Robins, R. Cortez, J. E. Van Nostrand

Publikováno v: physica status solidi (c). 2:2357-2360

GaN nanorods were grown on c-plane sapphire substrates under N-rich conditions by plasma-assisted molecular-beam epitaxy. Scanning electron microsopy revealed densely packed nanorods of hexagonal cross section with diameters ranging from roughly 40 t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb4e816f556538ab73792222318d5379
https://doi.org/10.1002/pssc.200461602

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Surface photovoltage spectroscopy of minority carrier diffusion lengths in undoped and Si‐doped GaN epitaxial films

Autor: Lawrence H. Robins, Seong-Eun Park, Joseph J. Kopanski, Youn-Seon Kang

Publikováno v: physica status solidi (c). 2:2433-2436

Undoped- and Si-doped GaN epitaxial films were grown on sapphire substrates by metal-organic chemical vapor deposition. Variable angle spectroscopic ellipsometry (VASE) and surface photovoltage (SPV) spectroscopy were used to determine the minority c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae9c008856a2085638af82ede772c491
https://doi.org/10.1002/pssc.200461332

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Photoreflectance study of the electronic structure of Si‐doped In y Ga 1− y As 1− x N x films with x < 0.012

Autor: S. N. Mohammad, Damian Bryson, Youn-Seon Kang, A. G. Birdwell, M. M. E. Fahmi, W. R. Thurber, Mark D. Vaudin, Alexander J. Shapiro, Lawrence H. Robins

Publikováno v: physica status solidi (c). 2:2800-2804

The electronic structure of Si-doped InyGa1−yAs1−xNx films on GaAs substrates, grown by nitrogen-plasma-assisted MBE, was examined by photoreflectance (PR) spectroscopy at temperatures between 20 K and 300 K. The measured critical-point energies

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f3291a17034d47b1e1462ccc177481d9
https://doi.org/10.1002/pssc.200461492

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Refractive index study of AlxGa1−xN films grown on sapphire substrates

Autor: A. V. Dmitriev, Umesh Mishra, Albert V. Davydov, Norman A. Sanford, Lawrence H. Robins, Sarah L. Keller, S. P. DenBaars, Alexander J. Shapiro, Denis V. Tsvetkov

Publikováno v: Journal of Applied Physics. 94:2980-2991

A prism coupling method was used to measure the ordinary (no) and extraordinary (ne) refractive indices of AlxGa1−xN films, grown by hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapor deposition (MOCVD) on sapphire, at several discr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::88c2c617523f4fb83206adfea5fe37e2
https://doi.org/10.1063/1.1598276

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High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in AlxGa1−xAs films

Autor: Lawrence H. Robins, Joseph G. Pellegrino, Kristine A. Bertness, John T. Armstrong, Albert J. Paul, Ryna B. Marinenko

Publikováno v: Journal of Applied Physics. 93:3747-3759

In an effort to improve the accuracy of photoluminescence (PL) measurements of the Al mole fraction (x) of AlxGa1−xAs alloys, the PL peak emission energy, EPL,peak, was measured at room temperature for molecular-beam epitaxy-grown AlxGa1−xAs film

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::497d3b04373b4a6e891f33f29a738806
https://doi.org/10.1063/1.1556554

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X‐ray diffraction, photoluminescence and composition standards of compound semiconductors

Autor: Marc L. Salit, Ryna B. Marinenko, Kristine A. Bertness, Alexana Roshko, Albert J. Paul, John T. Armstrong, R J. Matyi, Lawrence H. Robins

Publikováno v: physica status solidi (c). :992-997

Work is underway to develop composition standards and standardized assessment procedures for compound semiconductors. An AlGaAs composition standard with less than 2% uncertainty is being developed. The improved accuracy of this standard is being ach

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7826d9c6f0ac292fc2289e5f1fcf7ba4
https://doi.org/10.1002/pssc.200306245

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Spontaneous compositional modulation in the AlGaN layers of a thick AlGaN/GaN multilayer structure

Autor: J A. Tuchman, E Lakin, Mark D. Vaudin, Lawrence H. Robins, M J. Sherman, Igor Levin, J Ramer

Publikováno v: Journal of Applied Physics. 89:188-193

A periodic modulation with the wave vector parallel to the [0001] direction was observed in the AlGaN layers of a thick AlGaN/GaN multilayer heterostructure grown by metalorganic chemical vapor deposition. The modulation was attributed to a nearly si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ad2f334b0e3f2fc1979f2eca6305e80e
https://doi.org/10.1063/1.1329665

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