Zobrazeno 1 - 10
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pro vyhledávání: '"Law, Stephanie A."'
Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on understanding
Externí odkaz:
http://arxiv.org/abs/2406.15248
Autor:
Yu, Mingyu, Iddawela, Sahani Amaya, Wang, Jiayang, Hilse, Maria, Thompson, Jessica L., Hickey, Danielle Reifsnyder, Sinnott, Susan B, Law, Stephanie
GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it sui
Externí odkaz:
http://arxiv.org/abs/2403.12265
Nanolayered post-transition metal monochalcogenides (PTMMCs) stand out as promising advanced two-dimensional (2D) materials. Beyond inheriting the general advantages associated with traditional 2D materials, they exhibit unique properties, including
Externí odkaz:
http://arxiv.org/abs/2403.02956
Autor:
Yu, Mingyu, Wang, Jiayang, Iddawela, Sahani A., McDonough, Molly, Thompson, Jessica L., Sinnott, Susan B, Hickey, Danielle Reifsnyder, Law, Stephanie
GaAs(111)B is a semiconductor substrate widely used in research and commercial fields due to its low cost, mature synthesis technology, and excellent properties for manufacturing electronic devices. It is not only used to grow three-dimensional (3D)
Externí odkaz:
http://arxiv.org/abs/2401.10425
The study of van der Waals (vdW) materials has seen increased interest in recent years, due to the wide range of uses for these materials because of their unique mechanical, electronic, and optical properties. This area has recently expanded further
Externí odkaz:
http://arxiv.org/abs/2310.10811
Broadening the variety of two-dimensional (2D) materials and improving the synthesis of ultrathin films are crucial to the development of the semiconductor industry. As a state-of-the-art 2D material, Ga2Se2 has attractive optoelectronic properties w
Externí odkaz:
http://arxiv.org/abs/2212.11732
Autor:
To, D. Quang, Wu, Weipeng, Bhatt, Subhash, Liu, Yongchen, Janotti, Anderson, Zide, Joshua M. O., Ku, Mark J. H., Xiao, John Q., Jungfleisch, M. Benjamin, Law, Stephanie, Doty, Matthew F.
Publikováno v:
Phys. Rev. Materials 2023
Van der Waals antiferromagnetic and topological insulator materials provide powerful platforms for modern optical, electronic, and spintronic devices applications. The interaction between an antiferromagnet (AFM) and a topological insulator (TI), if
Externí odkaz:
http://arxiv.org/abs/2212.02656
Autor:
Wang, Zhengtianye, Nasir, Saadia, Liu, Yongchen, Mambakkam, Sivakumar Vishnuvardhan, Yu, Mingyu, Law, Stephanie
Hyperbolic metamaterials (HMMs) are engineered materials with a hyperbolic isofrequency surface, enabling a range of novel phenomena and applications including negative refraction, enhanced sensing, and subdiffraction imaging, focusing, and waveguidi
Externí odkaz:
http://arxiv.org/abs/2209.08398
Autor:
Wang, Yang, Liu, Binbin, Huang, Yue-Xin, Mambakkam, Sivakumar V., Wang, Yong, Yang, Shengyuan A., Sheng, Xian-Lei, Law, Stephanie A., Xiao, John Q.
In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulat
Externí odkaz:
http://arxiv.org/abs/2209.07666
Bi$_2$Se$_3$ is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decrease to less than approximately 6 nm, the top and bottom surface states couple, res
Externí odkaz:
http://arxiv.org/abs/2208.14330