Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Lavinia Elena Nistor"'
Autor:
S. Auffret, Nikita Strelkov, A.V. Vedyayev, N. Ryzhanova, Léa Cuchet, Mairbek Chshiev, B. Rodmacq, Maria Titova, Lavinia Elena Nistor, B. Dieny
Publikováno v:
Physical Review B
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 95, pp.064420. ⟨10.1103/PhysRevB.95.064420⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2017, 95, pp.064420. ⟨10.1103/PhysRevB.95.064420⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 95, pp.064420. ⟨10.1103/PhysRevB.95.064420⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2017, 95, pp.064420. ⟨10.1103/PhysRevB.95.064420⟩
International audience; We present a theory of the anisotropy of tunneling magnetoresistance (ATMR) phenomenon in magnetic tunnel junctions (MTJs) attributed to Rashba spin-orbit interaction in the insulating barrier. ATMR represents the difference o
Autor:
Bernard Dieny, C. Portemont, I Lucian Prejbeanu, Clarisse Ducruet, Bernard Rodmacq, Lavinia Elena Nistor
Publikováno v:
IEEE Transactions on Magnetics. 46:1412-1415
The perpendicular magnetic anisotropy (PMA) of Pt/CoFe(B)/MgO bottom electrodes and the tunnel magnetoresistance (TMR) of CoFeB-based magnetic tunnel junctions (MTJ) have been analyzed as a function of Mg thickness for naturally oxidized barriers. Lo
Publikováno v:
IEEE Transactions on Magnetics. 45:3472-3475
Antiferromagnetic coupling between magnetic electrodes has been observed in non-epitaxial perpendicularly magnetized MgO tunnel junctions. This coupling becomes less negative with increasing annealing temperature up to 375degC. This can be possibly r
Autor:
Wolfgang Kuch, Bernard Rodmacq, W. Stefanowicz, Gilles Gaudin, Jan Vogel, Liliana D. Buda-Prejbeanu, Stefania Pizzini, Stéphane Auffret, Lavinia Elena Nistor
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2014, 104 (1), pp.012404. ⟨10.1063/1.4860985⟩
Applied Physics Letters, American Institute of Physics, 2014, 104 (1), pp.012404. ⟨10.1063/1.4860985⟩
Applied Physics Letters, 2014, 104 (1), pp.012404. ⟨10.1063/1.4860985⟩
Applied Physics Letters, American Institute of Physics, 2014, 104 (1), pp.012404. ⟨10.1063/1.4860985⟩
International audience; We investigated the magnetic switching of MgO/Co/Pt pillars with perpendicular magnetic anisotropy, for lateral pillar sizes from 30 nm to 2 lm and for Co layer thicknesses between 1.8 and 2.6 nm. For large pillars, both the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9728271249f8514515606607f44c5923
https://hal.science/hal-00926092
https://hal.science/hal-00926092
Autor:
M. Marins de Castro, Sébastien Bandiera, S. Auffret, R. C. Sousa, B. Dieny, L. San-Emeterio-Alvarez, I. L. Prejbeanu, Lavinia Elena Nistor, Ursula Ebels, B. Rodmacq, Laurent Vila, B. Lacoste, Clarisse Ducruet
Publikováno v:
International Semiconductor Conference Dresden-Grenoble.
This work reports on advances in MRAM cells aiming at sub-nanosecond switching and for sub-20nm technology nodes. Ultrafast precessional spin-transfer switching in elliptical magnetic tunnel junction nanopillars is possible to obtain in samples integ
Autor:
Mairbek Chshiev, Lavinia Elena Nistor, Bernard Rodmacq, Alain Schuhl, Bernard Dieny, Stéphane Auffret
Publikováno v:
Physical Review B. 81
The influence of magnetic layer thickness on the interlayer coupling through a tunnel barrier is investigated in Co/MgO/Co structures with perpendicular anisotropy. Despite the rather large MgO thickness, a clear antiferromagnetic coupling is observe
Autor:
Matthieu Jamet, Vincent Calvo, Bernard Rodmacq, Yves Samson, Lavinia Elena Nistor, Stéphane Auffret, P. Warin, Jean-Michel Hartmann, L. Grenet, Pierre Noé
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2009, 94 (3), pp.032502. ⟨10.1063/1.3064135⟩
Applied Physics Letters, 2009, 94 (3), pp.032502. ⟨10.1063/1.3064135⟩
Applied Physics Letters, American Institute of Physics, 2009, 94 (3), pp.032502. ⟨10.1063/1.3064135⟩
Applied Physics Letters, 2009, 94 (3), pp.032502. ⟨10.1063/1.3064135⟩
In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina
Publikováno v:
Applied Physics Letters. 94:012512
This letter presents a study of perpendicular magnetic anisotropy in oxide/Co/Pt structures, which could constitute the upper magnetic electrode of magnetic tunnel junctions. The growth of cobalt layers on SiO2 substrates shows that all 0.6 nm thick