Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Lavakumar Ranganathan"'
Publikováno v:
2022 IEEE International Test Conference (ITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bb105f38143b6062a8d753ce9b37dd4
https://doi.org/10.1109/itc50671.2022.00043
https://doi.org/10.1109/itc50671.2022.00043
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper presents a user-defined fault model (UDFM) that accounts for silicon behaviors that cannot be explained using traditional stuck-at and transition delay fault models. The new model targets cell-internal faults but does not require time-inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3125c82f400b8fce39c4c28d82544ea9
https://doi.org/10.31399/asm.cp.istfa2021p0369
https://doi.org/10.31399/asm.cp.istfa2021p0369
Autor:
Ruby Vollrath, Corey Senowitz, Hieu Nguyen, Lesly Endrinal, Caiwen Yuan, Lavakumar Ranganathan
Publikováno v:
International Symposium for Testing and Failure Analysis.
Defect localization has become more complicated in the FinFET era. As with planar devices, it is still generally possible to electrically isolate a failure down to a single transistor. However, the complexity of certain FinFET devices can lead to amb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e218f4ac65a0c133b90e51fefdafec58
https://doi.org/10.31399/asm.cp.istfa2016p0574
https://doi.org/10.31399/asm.cp.istfa2016p0574