Electrical properties of boron, phosphorus and gallium co-doped silicon

Autor: Fourmond, Erwann, Forster, Maxime, Einhaus, Roland, Lauvray, Hubert, Kraiem, Jed, Lemiti, Mustapha

Publikováno v: In Energy Procedia 2011 8:349-354

Doping engineering to increase the material yield during crystallization of B and P compensated silicon

Autor: Forster, Maxime, Fourmond, Erwann, Einhaus, Roland, Lauvray, Hubert, Kraiem, Jed, Lemiti, Mustapha

Publikováno v: Proceedings of the 25st European Photovoltaic Solar Energy Conference
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, Sep 2010, Valencia, Spain. pp.1250-1253, ⟨10.4229/25thEUPVSEC2010-2BO.3.2⟩

25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 1250-1253
In this paper, we investigate gallium co-doping during crystallization of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16c1251e977d7e8c262dddf787940551
https://hal.archives-ouvertes.fr/hal-00595328