Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Lauri Knuuttila"'
Autor:
Giuseppe Iannaccone, Gianluca Fiori, Lauri Knuuttila, Manuel Tomberger, Luca Sayadi, Oliver Häberlen, Gilberto Curatola
Publikováno v:
IEEE Transactions on Electron Devices. 65:51-58
We present an investigation of vertical leakage in GaN-on-Si epitaxial stack through electrical characterization and device simulations. Different structures of increasing complexity have been fabricated and analyzed in order to achieve a complete un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee1a1c13df6a7e9dec238a993961f1ed
https://doi.org/10.1109/ted.2017.2773670
https://doi.org/10.1109/ted.2017.2773670
Autor:
Gilberto Curatola, Martin E. Huber, Alberta Bonanni, Gianmauro Pozzovivo, Ingo Daumiller, Lauri Knuuttila, Marco Silvestri, Anders Lundskog
Publikováno v:
physica status solidi (a). 213:1222-1228
The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three different sets of samples have been analyzed by means of dynamic instabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ca0d1dd1303a5407db89cb8b66f9494
https://doi.org/10.1002/pssa.201532752
https://doi.org/10.1002/pssa.201532752
Autor:
Marcus Reiss, Clemens Ostermaier, Lauri Knuuttila, Rudolf Pietschnig, Thorge Brünig, Maria Reiner
Publikováno v:
physica status solidi (b). 252:1121-1126
The etch mechanism of group-III-nitrides in hot H3PO4 has been studied and compared to KOH. The etched surfaces were investigated by AFM, SEM, TEM, EDX and the etch solutions by NMR. AlGaN is shown to be selectively etched by low temperature H3PO4 or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::546ba38cd33def09d1a5711bab190495
https://doi.org/10.1002/pssb.201451504
https://doi.org/10.1002/pssb.201451504
Autor:
Juha Riikonen, Turkka Tuomi, Aapo Lankinen, Jaakko Sormunen, Antti Säynätjoki, Lauri Knuuttila, Harri Lipsanen, Mcnally, P. J., Danilewsky, A., Sipilä, H., Vaijärvi, S., Lumb, D., Owens, A.
Publikováno v:
Aalto University
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ee630b777a057286bd1ba65fe4b3c128
https://research.aalto.fi/en/publications/59447eb1-c64c-4b28-8779-d224b509d2d8
https://research.aalto.fi/en/publications/59447eb1-c64c-4b28-8779-d224b509d2d8
