Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Laurentiu Braic"'
Autor:
Jian-Wei Liang, Kuang-Hui Li, Chun Hong Kang, Laurentiu Braic, Adrian Emil Kiss, Nicolae Catalin Zoita, Tien Khee Ng, Boon S. Ooi
Publikováno v:
AIP Advances, Vol 10, Iss 11, Pp 119901-119901-1 (2020)
Externí odkaz:
https://doaj.org/article/90a7fe89b0314f1dad60e8cd84946c32
Autor:
Jian-Wei Liang, Kuang-Hui Li, Chun Hong Kang, Laurentiu Braic, Adrian Emil Kiss, Nicolae Catalin Zoita, Tien Khee Ng, Boon S. Ooi
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065318-065318-12 (2020)
Single-crystal nickel oxide (NiO) was grown, using epitaxial titanium nitride (TiN) as a preorienting interlayer, on both the lattice-matching substrate of magnesium oxide in the (100) surface orientation, MgO-(100), and a lattice-mismatched silicon
Externí odkaz:
https://doaj.org/article/b97d9b2cc9534a41b1828db9a95b9cd3
Autor:
Zaibing Guo, Kuang-Hui Li, Jung-Hong Min, Chun Hong Kang, Jian-Wei Liang, Mohamed N. Hedhili, Nasir Alfaraj, Laurentiu Braic, Tien Khee Ng, Boon S. Ooi
Publikováno v:
ACS Applied Materials & Interfaces. 12:53932-53941
Recent advancements in gallium oxide (Ga2O3)-based heterostructures have allowed optoelectronic devices to be used extensively in the fields of power electronics and deep-ultraviolet photodetection. While most previous research has involved realizing
Autor:
Nasir A. Alfaraj, Kuang-Hui Li, Chun Hong Kang, Laurentiu Braic, Nicolae C. Zoita, Adrian E. Kiss, Tien Khee Ng, Boon S. Ooi
Publikováno v:
Oxide-based Materials and Devices XIII.
Autor:
Boon S. Ooi, Kuang-Hui Li, Mohamed N. Hedhili, Chun Hong Kang, Tien Khee Ng, Zaibing Guo, Nasir Alfaraj, Laurentiu Braic
Publikováno v:
ACS Applied Materials & Interfaces. 11:35095-35104
In recent years, β-Ga2O3/NiO heterojunction diodes have been studied, but reports in the literature lack an investigation of an epitaxial growth process of high-quality single-crystalline β-Ga2O3/NiO thin films via electron microscopy analysis and
Autor:
Nasir Alfaraj, Kuang-Hui Li, Laurentiu Braic, Mohamed Nejib Hedhili, Zaibing Guo, Tien Khee Ng, Boon S. Ooi
Publikováno v:
Optical Materials Express. 12:3273
In this article, we determine the band alignment at the thermodynamically stable heterointerface between a ( 2 ¯ 01 )-oriented single-domain β-(In0.072Ga0.928)2O3 crystal and bulk c-plane sapphire, namely, (0001)-oriented α-Al2O3. The β-(In0.072G
Publikováno v:
Oxide-based Materials and Devices XI.
Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (e-Ga2O3 and β-Ga2O3) were sequentially grown under the same conditions but in a different ambience. Our X-ray diffraction meas
Autor:
Boon S. Ooi, Laurentiu Braic, A. Kiss, Nicolae Catalin Zoita, Chun Hong Kang, Tien Khee Ng, Kuang-Hui Li, Nasir Alfaraj
Publikováno v:
2019 IEEE Photonics Conference (IPC).
This work investigates β-Ga 2 O 3 photodetectors grown on MgO substrates with a TiN template, showing peak responsivities of 34.91 and 224.09 A/W at 5 and 15V reverse-bias, respectively, for 250-nm incident-light wavelength. A mesa device structure
Autor:
Kuang-Hui, Li, Nasir, Alfaraj, Chun Hong, Kang, Laurentiu, Braic, Mohamed Nejib, Hedhili, Zaibing, Guo, Tien Khee, Ng, Boon S, Ooi
Publikováno v:
ACS applied materialsinterfaces. 11(38)
In recent years, β-Ga
Autor:
Mihaela, Dinu, Laurentiu, Braic, Sibu C, Padmanabhan, Michael A, Morris, Irina, Titorencu, Vasile, Pruna, Anca, Parau, Nadezhda, Romanchikova, Leslie F, Petrik, Alina, Vladescu
Publikováno v:
Journal of the mechanical behavior of biomedical materials. 103
Niobium oxide coatings deposited on Ti