GaAs WET and Siconi Cleaning Sequences for an Efficient Oxide Removal

Autor: Pascal Besson, Laurent Vallier, M. C. Roure, Mickael Martin, Jean-Paul Barnes, M. Rebaud, Virginie Loup, P.E. Raynal

Publikováno v: ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology, IOP Science, 2019, 8 (2), pp.P106-P111. ⟨10.1149/2.0131902jss⟩
ECS Journal of Solid State Science and Technology, 2019, 8 (2), pp.P106-P111. ⟨10.1149/2.0131902jss⟩

International audience; Before metal deposit or epitaxial regrowth steps, efficient surface preparations are mandatory in order to remove both contaminants (C, F) and surface oxides. In this paper, we assess several cleaning sequences and compare the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf8ea4af02e3c4ef72b0b6217f66ec0b
https://hal-cea.archives-ouvertes.fr/cea-02186469

Wet and Siconi® Surface Preparation Sequences for SiGe Epitaxial Regrowth

Autor: P.E. Raynal, Virginie Loup, Laurent Vallier, Nicolas Bernier, Pascal Besson, Jean-Michel Hartmann

Publikováno v: ECS Meeting Abstracts. :1729-1729

The efficiency of the “Siconi®” process, which is based on the use of a NH3 / NF3 remote plasma and anneals at temperatures less than 180°C, was recently assessed on SiGe surfaces. Siconi® removed GeO2 and SiO2, but was less efficient on GeOx.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f0b0f892e87212b7dcc9630ad0e41c2
https://doi.org/10.1149/ma2020-02241729mtgabs

Overview of several applications of chemical downstream etching (CDE) for IC manufacturing: advantages and drawbacks versus WET processes

Autor: Sonarith Chhun, Laurent Vallier, Alain Campo, Gilles Cunge, Côme de Buttet, Philippe Garnier, S. Zoll, Emilie Prevost, Thomas Massin, Patrick Maury

Publikováno v: SPIE Proceedings.

Today the IC manufacturing faces lots of problematics linked to the continuous down scaling of printed structures. Some of those issues are related to wet processing, which are often used in the IC manufacturing flow for wafer cleaning, material etch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::261ab2cd95fd4103d27f92bd846b003a
https://doi.org/10.1117/12.2257971

Measuring ion velocity distribution functions through high-aspect ratio holes in inductively coupled plasmas

Autor: Camille Petit-Etienne, Odile Mourey, Jerome Dubois, Laurent Vallier, Emilie Despiau-Pujo, Gilles Cunge, Nader Sadeghi, Maxime Darnon, Philippe Bézard

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2016, 108, pp.93109-32108. ⟨10.1063/1.4942892⟩
Applied Physics Letters, 2016, 108, pp.93109-32108. ⟨10.1063/1.4942892⟩

Several issues associated with plasma etching of high aspect ratio structures originate from the ions' bombardment of the sidewalls of the feature. The off normal angle incident ions are primarily due to their temperature at the sheath edge and possi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::876c18d82dbc1cfca7f5287a7e7e312d
https://hal.archives-ouvertes.fr/hal-01865123

Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials

Autor: Maxime Darnon, Thierry Chevolleau, Christophe Licitra, Laurent Vallier, Nicolas Posseme, Joaquim Torres, J. Ducote, Olivier Joubert, T. David

Publikováno v: Journal of Vacuum Science and Technology
Journal of Vacuum Science and Technology, 2008, pp.B 26, 1964-1970
Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2008, pp.B 26, 1964-1970

This work focuses on the impact of oxidizing (O2) and reducing plasma ashing chemistries (NH3, CH4) on the modifications of dielectric materials in a porous or an hybrid state (SiOCH matrix+porogen). The plasma ashing processes have been performed on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9677b7c4fc5599b89af82bb6ce745a8c
https://doi.org/10.1116/1.3006021