Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Laurent Ulmer"'
Autor:
Laurent Ulmer, Jean-Pierre Blanc, Emmanuel Defay, Bernard Andre, Emmanuelle Serret, Sophie Verrun, Philippe Delpech, Marc Aid, Pierre Garrec, Julie Guillan, Denis Pellissier, Pascal Ancey, David Wolozan
Publikováno v:
Solid-State Electronics. 51:1624-1628
This paper describes realization and characterization of SrTiO 3 (STO) high K MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors in order to realize a high pass filter. Surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cfe2cfb16c8c58c781527689b149dad
https://doi.org/10.1016/j.sse.2007.09.036
https://doi.org/10.1016/j.sse.2007.09.036
Autor:
Ludivine Galéra, Laurent Ulmer, Emmanuel Defay, Gérard Tartavel, Julie Guillan, Bernard Andre, Françoise Baume
Publikováno v:
Integrated Ferroelectrics. 67:93-101
SrTiO3 (STO) deposition was performed by Ion Beam Sputtering on Pt/TiO2/SiO2/Si substrates. We showed that curing annealing after top electrode deposition is essential to achieve low leakage currents. A decrease of the leakage currents for thinner ST
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3657fead6a2f9b1dc35d5fffb82152a4
https://doi.org/10.1080/10584580490898560
https://doi.org/10.1080/10584580490898560
Autor:
Denise Muyard, Emmanuel Defay, Françoise Baume, Gérard Tartavel, Bernard Andre, Laurent Ulmer
Publikováno v:
Ferroelectrics. 288:121-132
STO deposition was performed by IBS on Pt/(TiOx or TiNy)/SiO 2 /Si substrates. Correct stoichiometry was obtained, as observed by RBS. Ti, O 2 -annealed Ti, N 2 -annealed Ti displayed equivalent glue layer performance for STO integration. Perovskite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8018a5426f24654077940ec5f5ded0b4
https://doi.org/10.1080/00150190390211945
https://doi.org/10.1080/00150190390211945
Autor:
Emmanuel Defay, Jean-Pierre Blanc, Philippe Delpech, Pascal Ancey, Pierre Garrec, J.-C. Giraudin, Bernard Andre, Marc Aid, Julie Guillan, Emmanuelle Serret, Denis Pellissier, Laurent Ulmer, David Wolozan
Publikováno v:
2006 European Solid-State Device Research Conference.
This paper describes realization and characterization of SrTiO3 (STO) high K MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d9958629a116304d2732c4be5c6fc57
https://doi.org/10.1109/essder.2006.307669
https://doi.org/10.1109/essder.2006.307669