Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Laurent Maniguet"'
Autor:
Muriel Braccini, Laurent Maniguet, Guillaume Parry, R. Martin, Marc Verdier, Didier Pellerin, Fabien Volpi, Chaymaa Boujrouf, Solène Comby-Dassonneville, Y. Champion, Frédéric Charlot, S. Iruela, A. Antoni-Zdziobeka, Francine Roussel-Dherbey
Publikováno v:
2019 IEEE Holm Conference on Electrical Contacts
2019 IEEE Holm Conference on Electrical Contacts, Sep 2019, Milwaukee, United States. pp.1-8, ⟨10.1109/HOLM.2019.8923946⟩
2019 IEEE Holm Conference on Electrical Contacts, Sep 2019, Milwaukee, United States. pp.1-8, ⟨10.1109/HOLM.2019.8923946⟩
International audience; Fundamental understanding and quantitative characterization of electron transport mechanisms between two solids brought into mechanical contact require the development of a dedicated multifunctional device. In this study, we r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fe5c9e6231367314eed3edaa169fe7e
https://hal.archives-ouvertes.fr/hal-02992870
https://hal.archives-ouvertes.fr/hal-02992870
Eurofer corrosion by the flow of the eutectic alloy Pb–Li in the presence of a strong magnetic field
Publikováno v:
Fusion Engineering and Design
Fusion Engineering and Design, Elsevier, 2011, 86 (1), pp.106-120. ⟨10.1016/j.fusengdes.2010.08.050⟩
Fusion Engineering and Design, Elsevier, 2011, 86 (1), pp.106-120. ⟨10.1016/j.fusengdes.2010.08.050⟩
International audience; A new investigation of the Eurofer 97 corrosion by the MHD flow of the liquid eutectic alloy Pb-17Li is presented. The experimental data previously obtained in Riga are confirmed and an attempt to model this phenomenon is pres
Autor:
Florence Robaut, Chad W. Sinclair, Yves Bréchet, Laurent Maniguet, Jean Denis Mithieux, Jean Hubert Schmitt
Publikováno v:
Advanced Engineering Materials. 5:570-574
Publikováno v:
Journal of Applied Physics. 85:6477-6485
The mechanical stresses in tungsten lines on a silicon substrate were determined by x-ray diffraction (XRD). The stresses are found to be plane and tensile. The stresses induced in the silicon substrate are compressive under the lines, but tensile in