Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Laurent Kroely"'
Autor:
Monja Moeller, Torsten Geipel, Andreas Wolf, Zhenhao Zhang, Achim Kraft, Laurent Kroely, Julia Kumm, Peter Wohlfahrt, Ulrich Eitner
Publikováno v:
Energy Procedia. 98:125-135
Aluminium, thermally evaporated with physical vapor deposition (PVD), is considered a cost efficient rear metallization for crystalline silicon heterojunction or tunnel oxide passivated solar cells. Owing to the temperature-sensitivity of the solar c
Autor:
Tobias Dannenberg, Jan Temmler, Anamaria Moldovan, Martin Zimmer, Laurent Kroely, Jochen Rentsch
Publikováno v:
Energy Procedia. 92:374-380
Silicon Heterojunction (SHJ) solar cells represent a key technology to approach very high conversion efficiencies close to the theoretical limit of silicon solar cells. The main advantages of SHJ solar cells are a lean production chain with low tempe
Publikováno v:
Energy Procedia. 55:777-785
Silicon Hetero Junction (SHJ) structures and ZnO:Al (AZO) were deposited completely by high throughput industrial inline CVD and PVD deposition systems, respectively. A design of experiment of the AZO deposition parameters was carried out, to find su
Autor:
Martin Bivour, Laurent Kroely, Jan Nekarda, Winfried Wolke, Jonas Bartsch, Markus Glatthaar, Gisela Cimiotti, Andreas Rodofili
Publikováno v:
Solar RRL. 1:1700085
We present a laser‐based method for the metallization of silicon heterojunction solar cells by Cu‐plating. It consists of first applying a dielectric layer on the transparent conductive oxide (TCO) as a plating mask. Then, a NiV seed is transferr
Publikováno v:
MRS Proceedings. 1245
In the optimization of high-growth rate hydrogenated microcrystalline silicon (μc-Si:H) for photovoltaics, the observation of the infrared (IR) absorption peaks around 2000 cm-1 - which originate from silicon hydrogen (Si-HX) bonds in the film bulk
Publikováno v:
MRS Proceedings. 1153
One of the primary challenges in the application of hydrogenated microcrystalline silicon (μc-Si:H) to photovoltaic cells is achieving high growth rates while maintaining good material quality over a wide process window. The rapid characterization o
Publikováno v:
Energy Procedia. :310-319
The present work demonstrates the suitability of spectral ellipsometry (SE) to properly characterize ultra-thin (< 15nm) hydrogenated microcrystalline silicon (μc-Si:H) and its possible advantages over alternative methods, e.g. Raman spectroscopy. F
Autor:
Bishal Kafle, Marc Hofmann, Ralf Preu, Jochen Rentsch, S. Kühnhold, Laurent Kroely, Pierre Saint-Cast
Publikováno v:
Energy Procedia. :273-279
We present a detailed study about the influence of post-deposition temperature treatment on PECVD Al2O3 passivation layers. Fourier transform infrared spectroscopy (FTIR) and quasi-steady-state photoconductance (QSSPC) were applied for characterizati