Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Laurent Grenouillet"'
Autor:
Simone D’Agostino, Filippo Moro, Tristan Torchet, Yiğit Demirağ, Laurent Grenouillet, Niccolò Castellani, Giacomo Indiveri, Elisa Vianello, Melika Payvand
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-12 (2024)
Abstract Neuroscience findings emphasize the role of dendritic branching in neocortical pyramidal neurons for non-linear computations and signal processing. Dendritic branches facilitate temporal feature detection via synaptic delays that enable coin
Externí odkaz:
https://doaj.org/article/3d883f8d1b564cd486713ccbcd2dead6
Autor:
Simone D’Agostino, Filippo Moro, Tristan Torchet, Yiğit Demirağ, Laurent Grenouillet, Niccolò Castellani, Giacomo Indiveri, Elisa Vianello, Melika Payvand
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-2 (2024)
Externí odkaz:
https://doaj.org/article/ea58cfbb8bab4eb9bd8b171fd65e5b09
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Justine Barbot, Jean Coignus, Nicolas Vaxelaire, Catherine Carabasse, Olivier Glorieux, Messaoud Bedjaoui, Francois Aussenac, Francois Andrieu, Franeois Triozon, Laurent Grenouillet
Publikováno v:
ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC).
Autor:
Lucas Reganaz, Eduardo Esmanhotto, Nazim Ait Abdelkader, Joel Minguet Lopez, Niccolo Castellani, Quentin Rafhay, Damien Deleruyelle, Laurent Grenouillet, Francois Aussenac, Elisa Vianello, François Andrieu, Gabriel Molas
Publikováno v:
physica status solidi (a)
physica status solidi (a), 2022, 219 (13), pp.2100753. ⟨10.1002/pssa.202100753⟩
physica status solidi (a), 2022, 219 (13), pp.2100753. ⟨10.1002/pssa.202100753⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::099ff4a6a657f70786662a2978e1ade5
https://hal.science/hal-03840622
https://hal.science/hal-03840622
Autor:
Seung-Jun Bae, Roberto Bez, Paolo Cappelletti, Paolo Fantini, Akira Goda, Laurent Grenouillet, Mark Helm, Gertjan Hemink, Daniele Ielmini, Dae-Hyun Kim, Hye-Jung Kwon, Gabriel Molas, Ravi Nair, Giacomo Pedretti, Fabio Pellizzer, Agostino Pirovano, Andrea Redaelli, Julien Ryckaert, Shairfe Muhammad Salahuddin, Jon Slaughter, Pieter Weckx, Jung Yoon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c26e7737255f61426bc3e4594ecb688
https://doi.org/10.1016/b978-0-12-820758-1.09988-x
https://doi.org/10.1016/b978-0-12-820758-1.09988-x
Autor:
F. Mazen, C. Pellissier, C. Jahan, A. Roman, Laurent Grenouillet, N.-P. Tran, M. Bedjaoui, A. Seignard, S. Ricavy, Elisa Vianello, P. Besombes, V. Meli, O. Billoint, Christelle Boixaderas, M. Tessaire, S. Landis, Gabriel Molas, A. Persico, A. Magalhaes-Lucas, P. Dezest, Christelle Charpin-Nicolle, F. Gaillard, S. Bernasconi, R. Segaud, J. Arcamone, Steve W. Martin, C. Carabasse, T. Magis, N. Castellani, Etienne Nowak
Publikováno v:
IEEE International Memory Workshop (IMW)
2021 IEEE International Memory Workshop (IMW)
2021 IEEE International Memory Workshop (IMW)
We present for the first time Si-doped HfO 2 -based OxRAM 16kbit arrays integrated in the BEOL of 28nm FDSOI CMOS, targeting low cost and low power embedded applications. Excellent LRS/HRS raw distributions are reported on 1T-1R 16kbit arrays with ze
Autor:
Laurent Grenouillet, Philip N. Klein, Justine Barbot, Jean Coignus, Suzanne Lancaster, Stefan Slesazeck, Ole Richter, Erika Covi, Elisabetta Chicca, Athanasios Dimoulas, Viktor Havel, Quang T. Duong, Thomas Mikolajick
Publikováno v:
2021 IEEE International Symposium on Circuits and Systems (ISCAS)
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5
STARTPAGE=1;ENDPAGE=5;TITLE=2021 IEEE International Symposium on Circuits and Systems (ISCAS)
ISCAS
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5
STARTPAGE=1;ENDPAGE=5;TITLE=2021 IEEE International Symposium on Circuits and Systems (ISCAS)
ISCAS
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1af75b3353a782f4547b577c8bc65d59
https://pub.uni-bielefeld.de/record/2959788
https://pub.uni-bielefeld.de/record/2959788
Autor:
P. Chiquet, T. Francois, Jean Coignus, Uwe Schroeder, F. Gaillard, Nicolas Vaxelaire, Etienne Nowak, S. Chevalliez, Stefan Slesazeck, Marc Bocquet, Laurent Grenouillet, Thomas Mikolajick, F. Aussenac, C. Carabasse, Claudia Richter
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2021, 118 (6), pp.062904. ⟨10.1063/5.0035650⟩
Applied Physics Letters, 2021, 118 (6), pp.062904. ⟨10.1063/5.0035650⟩
International audience; Scaling of planar HfO2-based ferroelectric capacitors is investigated experimentally by varying the capacitor area within 5 orders of magnitude, under the scope of limited thermal budget for crystallization. Both Hf0.5Zr0.5O2