Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Laurent Dieu"'
Autor:
Bruno La Fontaine, Yunfei Deng, Laurent Dieu, Christian Chovino, Harry J. Levinson, Adam R. Pawloski, Obert R. Wood
Publikováno v:
SPIE Proceedings.
Photoresist patterning experiments on the EUVL Engineering Test Stand using two masks with different types of architecture indicate that etched-multilayer binary masks can provide larger process latitude than standard patterned absorber masks. The tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37f63a612d9fb9297836038fa419caad
https://doi.org/10.1117/12.539074
https://doi.org/10.1117/12.539074
Autor:
Alden Acheta, Adam R. Pawloski, Franklin D. Kalk, Harry J. Levinson, Christopher A. Spence, Christian Chovino, Yunfei Deng, Eric Johnstone, Laurent Dieu, Bruno La Fontaine
Publikováno v:
SPIE Proceedings.
The impact of wafer and reticle anti-reflection coatings (ARCs) on the aerial image of ArF lithography scanners is measured using contrast curves and critical dimension (CD) analysis. The importance of a good ARC layer on the wafer appears to be grea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a86e41adeb580fc3d91156d1d159e22c
https://doi.org/10.1117/12.518220
https://doi.org/10.1117/12.518220
Autor:
Laurent Dieu, Bruno La Fontaine, Harry J. Levinson, Julio Reyes, Christian Chovino, Eric Johnstone, Adam R. Pawloski
Publikováno v:
SPIE Proceedings.
Extreme Ultraviolet Lithography (EUVL) is the leading candidate for manufacturing integrated circuits beyond the 45-nm technology node. The masks for EUVL are reflective and significantly different from current transmission masks for deep UV lithogra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6e328f0435a6e10f9fd18b0d4dd240b
https://doi.org/10.1117/12.518259
https://doi.org/10.1117/12.518259
Autor:
Christian Chovino, Prakash Krishnan, Laurent Dieu, Julio Reyes, Dianna Coburn, Eric Johnstone, Christian Capella, Dongsung Hong
Publikováno v:
SPIE Proceedings.
The integration of 193nm Lithography is close to full production for the 90nm node technology and shows potential for lithographic resolution down to the 65nm node. The quality of 193nm reticles including binary, EAPSM and AAPSM must be outstanding s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a91bb3e007fe2b95a23c1523f8950fe7
https://doi.org/10.1117/12.518262
https://doi.org/10.1117/12.518262
Publikováno v:
SPIE Proceedings.
Spin spray and bath immersion systems are still the competing technologies for mask process. The preference for one or the other is largely dependent on factor such as performance, size, throughput, and cost. This paper focuses on the process optimiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a8c2ec387266e36d7a6c79b92d296e
https://doi.org/10.1117/12.518247
https://doi.org/10.1117/12.518247
Publikováno v:
SPIE Proceedings.
Photomask resist strip processes have traditionally used the sulfuric-peroxide-mix, known as SPM, or Piranha. This paper details a recent investigation into the utilization of solvent-based resist strip solutions applied to photomask resist stripping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7060663050fc3ece7a57127103bb206f
https://doi.org/10.1117/12.504265
https://doi.org/10.1117/12.504265
Autor:
Christian Chovino, Laurent Dieu
Publikováno v:
SPIE Proceedings.
A method based on UV in air environment to improve the stability of the material of the photoreticles throughout cleans repeated over is suggested in this work. A typical aggressive clean was performed on two different Embedded Shifter materials, 193
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e0453b1ea451c364e8a6c042086e39a
https://doi.org/10.1117/12.504048
https://doi.org/10.1117/12.504048
Autor:
Patrick Montgomery, John Maltabes, Lloyd C. Litt, Kevin D. Lucas, Erika Schaefer, Robert John Socha, Laurent Dieu, David Mellenthin, Jan Pieter Kuijten, Wil Pijnenburg, Gregory P. Hughes, Shawn Cassel, Eric L. Fanucchi, Kurt E. Wampler, Will Conley, Linda Yu, Arjan Verhappen, Geert Vandenberghe, Vincent Wiaux
Publikováno v:
SPIE Proceedings.
Contact patterning for the 65nm device generation will be an exceedingly difficult task. The 2001 SIA roadmap lists the targeted contact size as 90nm with +/-10% CD control requirements of +/-9nm. Defectivity levels must also be below one failure per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a302218c17a2481c2cd74425644593ce
https://doi.org/10.1117/12.485499
https://doi.org/10.1117/12.485499
Autor:
Jan-Pieter Kiujten, Robert John Socha, Lloyd C. Litt, Greg P. Hughes, Arjan Verhappen, Eric L. Fanucchi, Laurent Dieu, Will Conley, David Mellenthin, Kevin D. Lucas, John Maltabes, Kurt E. Wampler
Publikováno v:
SPIE Proceedings.
Semiconductor manufacturers are increasingly focusing on contact and via layers as the most difficult lithography pattern. Focus and exposure latitude, MEF, as well as iso-dense bias are challenges for contact patterning. This situation is only expec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4db9090fa53950483dd1aeca51f0f5d
https://doi.org/10.1117/12.467783
https://doi.org/10.1117/12.467783
Publikováno v:
SPIE Proceedings.
Improving microprocessor speed, design and density are mainly determined by the minimum feature size that can be imaged on the wafer [1]. On the other hand, the latter is limited by the optics, the lithographic wavelength and the process used. Phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::654e4b1a1a7051a337ca09646dd14014
https://doi.org/10.1117/12.410762
https://doi.org/10.1117/12.410762