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pro vyhledávání: '"Laurent Bucelle"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 30:539-546
The critical dimension (CD) is highly influenced by the reactive ion etching (RIE) of silicon in the CMOS technology. The CD has to be well-controlled since it is one of the most important features related to process stability and product quality. Ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caf081567a41f166eca9b5d53d771636
https://doi.org/10.1109/tsm.2017.2758020
https://doi.org/10.1109/tsm.2017.2758020
Autor:
Caldwell, Kenneth
Publikováno v:
Solid State Technology. Sep2000, Vol. 43 Issue 9, p149. 4p. 2 Diagrams, 3 Graphs.
Autor:
Rizquez, Maria, Roussy, Agnes, Blue, Jakey, Bucelle, Laurent, Pinaton, Jacques, Pasquet, Julien
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing; Nov2017, Vol. 30 Issue 4, p539-546, 8p