Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Laurent Akesso"'
Autor:
Maureen E. Callow, Črtomir Donik, Chen Liu, Dennis Teer, Xueju Su, Su Wang, Laurent Akesso, Aleksandra Kocijan, Qi Zhao, Parnia Navabpour, Michala E. Pettitt, Monika Jenko, James A. Callow
Publikováno v:
Applied Surface Science. 255:6508-6514
A range of SiOx-like coatings was deposited on glass slides from a hexamethylsiloxane precursor by plasma-assisted CVD. The effect of varying deposition parameters, specifically ion cleaning time and HMDSO/O2 ratios, on the coating properties and ant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3624b2b1707f9762858290ac40aeb863
https://doi.org/10.1016/j.apsusc.2009.02.032
https://doi.org/10.1016/j.apsusc.2009.02.032
Autor:
Michala E. Pettitt, Joanne Stallard, Aleksandra Kocijan, Qi Zhao, Laurent Akesso, Chen Liu, Fraddry D’Souza, Su Wang, Patricia Calvillo Guinaldo, James A. Callow, Črtomir Donik, Maureen E. Callow, Monika Jenko, D.G. Teer, G.T. Donnelly, Lathe A. Jones, Peter R. Willemsen
Publikováno v:
Biofouling. 25:55-67
SiO(x)-like coatings were deposited on glass slides from a hexamethylsiloxane precursor by plasma-assisted CVD (PACVD). Surface energies (23.1-45.7 mJ m(-1)) were correlated with the degree of surface oxidation and hydrocarbon contents. Tapping mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a79a49bca8391931f83d5c8253cc6ffb
https://doi.org/10.1080/08927010802444275
https://doi.org/10.1080/08927010802444275
Autor:
Peter Andersson Ersman, David Nilsson, Göran Gustafsson, Negar Abdollahi Sani, Magnus Berggren, Mats Fahlman, Laurent Akesso, Isak Engquist, Xianjie Liu, Mats Robertsson, Petronella Norberg, Marie Nilsson, Magnus Svensson, Xavier Crispin, Hjalmar Hesselbom, Philip George Cooper, Xin Wang
Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb6de421c0b9c6e2fcaa83d60179c8ec
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-110476
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-110476
Publikováno v:
Materials Chemistry and Physics
Materials Chemistry and Physics, Elsevier, 2013, 141 (2-3), pp.602-612. ⟨10.1016/j.matchemphys.2013.04.040⟩
Materials Chemistry and Physics, Elsevier, 2013, 141 (2-3), pp.602-612. ⟨10.1016/j.matchemphys.2013.04.040⟩
International audience; A range of hybrid, SiOCH films were deposited on silicon substrates within a radio frequency plasma reactor using hexamethyldisiloxane (HMDSO) as a precursor. The plasma polymerized films were deposited at various HMDSO/argon/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45495fcc1caf0eb45442980d6bf76a9b
https://hal.archives-ouvertes.fr/hal-01119533
https://hal.archives-ouvertes.fr/hal-01119533