Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Laurence Jeon"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 58:1142-1159
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b22ea5ab2e87725340471ac76b607e9
https://doi.org/10.1109/jssc.2022.3214436
https://doi.org/10.1109/jssc.2022.3214436
Autor:
Sanghoon Sim, Laurence Jeon
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 22:493-498
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80d92841f6128a0d934eac5a6eaa11e
https://doi.org/10.5573/jsts.2022.22.6.493
https://doi.org/10.5573/jsts.2022.22.6.493
Autor:
Rodrigo M. Lebron, Nafati Aboserwal, Jorge L. Salazar-Cerreno, Jose D. Diaz, Laurence Jeon, Javier A. Ortiz
Publikováno v:
IEEE Transactions on Antennas and Propagation. 68:5421-5430
This article presents the development of a CMOS active array antenna unit cell as a potential solution for a highly dense, low-altitude short-coverage phased array $X$ -band radar network system. The antenna uses a cross-patch differential feed struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32fc42d667beb9105ac3f7d9d6a83cba
https://doi.org/10.1109/tap.2019.2947135
https://doi.org/10.1109/tap.2019.2947135
Publikováno v:
Electronics; Volume 6; Issue 4; Pages: 103
Electronics, Vol 6, Iss 4, p 103 (2017)
Electronics, Vol 6, Iss 4, p 103 (2017)
This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a higher power density per area and a higher power-added efficiency (PAE) using a 0.25 μm GaN HEMT process of WIN semiconductors, Inc. The optimum load im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cff8a4ffe57d67f1e74998e100c39144
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 14:818-823
A high-gain wideband low noise amplifier (LNA) using 0.25-㎛ Gallium-Nitride (GaN) MMIC technology is presented. The LNA shows 8 ㎓ to 15 ㎓ operation by a distributed amplifier architecture and high gain with an additional common source amplifier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d16122e78db03baaed1928dcc6cf1ee5
https://doi.org/10.5573/jsts.2014.14.6.818
https://doi.org/10.5573/jsts.2014.14.6.818
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 61:562-569
This paper presents an X-band bi-directional T/R chipset in 0.13 m CMOS. The T/R chipset consists of a bi-directional gain amplifier (BDGA), a 5-bit digital step attenuator with two BDGAs for compensating the switch losses, and a 6-bit phase shifter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e742af32588008c7505567cdbaa2e11
https://doi.org/10.1109/tmtt.2012.2227786
https://doi.org/10.1109/tmtt.2012.2227786
Ultra-compact universal polarization X-band unit cell for high-performance active phased array radar
Autor:
Sanghoon Sim, Laurence Jeon, Johghoon Chun, Jose D. Diaz, Jorge L. Salazar, Nafati Aboserwal, Javier A. Ortiz
Publikováno v:
2016 IEEE International Symposium on Phased Array Systems and Technology (PAST).
This paper describes the design of a high-performance X-band antenna array for a tileable dual-linear and circularly-polarized active phased array antenna. A 4×4 unit cell prototype was built and integrated with state-of-the-art T/R modules conformi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93c1f357e8de9f3cfffa00a74049e13f
https://doi.org/10.1109/array.2016.7832592
https://doi.org/10.1109/array.2016.7832592
Publikováno v:
IEEE Microwave and Wireless Components Letters. 24:878-880
An X-Band switchless bidirectional amplifier (BDA) in a 0.25 μm gallium-nitride (GaN) on SiC process is introduced. The proposed bidirectional amplifier comprises of a 1 W power amplifier (PA) and a low noise amplifier (LNA) for T/R modules of phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5135521ec2eb59fd20f9be98c5d407ef
https://doi.org/10.1109/lmwc.2014.2359366
https://doi.org/10.1109/lmwc.2014.2359366
Publikováno v:
2012 IEEE/MTT-S International Microwave Symposium Digest.
This paper presents the bi-directional CMOS-based T/R circuits. X-band bi-directional gain amplifier shows the gain of > 12 dB and the reverse isolation of > 35 dB at 8–12 GHz. X-band 5-bit phase shifter shows the insertion loss of < 17 dB, the RMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::917f901e84d8f1fe04996c58292752b6
https://doi.org/10.1109/mwsym.2012.6259562
https://doi.org/10.1109/mwsym.2012.6259562