Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Laurence Considine"'
Autor:
Jens-Peter Biethan, Dimitris Pavlidis, V. P. Sirkeli, D. D. Nedeoglo, Hans L. Hartnagel, Laurence Considine
Publikováno v:
Materials Science and Engineering: B. 177:594-599
ZnO nanostructures with a size ranging from 20 to 100 nm were successfully deposited on (1 0 0)-Si substrates at different temperatures (500–800 °C) using MOCVD. It could be confirmed that the size of ZnO nanostructures decreased with increasing g
Autor:
Eunjung Cho, Dimitris Pavlidis, Sanghyun Seo, Laurence Considine, Chong Jin, Giorgi Aroshvili
Publikováno v:
IEICE Transactions on Electronics. :1245-1250
The paper presents a systematic study of in-situ passivated AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) with submicron gates. DC, high frequency small signal, large signal and low frequency dispersion effects are reported
Autor:
Salim Faci, Dimitris Pavlidis, Arnaud Stolz, Elhadj Dogheche, Laurence Considine, Brigitte Loiseaux, Jean Chazelas, Didier Decoster, C. Tripon-Canseliet
Publikováno v:
Optics Letters
Optics Letters, 2012, 37 (15), pp.3039-3041. ⟨10.1364/OL.37.003039⟩
Optics Letters, Optical Society of America-OSA Publishing, 2012, 37 (15), pp.3039-3041. ⟨10.1364/OL.37.003039⟩
Optics Letters, 2012, 37 (15), pp.3039-3041. ⟨10.1364/OL.37.003039⟩
Optics Letters, Optical Society of America-OSA Publishing, 2012, 37 (15), pp.3039-3041. ⟨10.1364/OL.37.003039⟩
International audience; In this Letter, we have designed and fabricated a III-V semiconductor multilayer based on surface plasmon resonance (SPR) operating at the telecom wavelength. Optimization of the optogeometrical parameters and the metal/semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7fadbc417a8de5ea90442c8ee2b60df
https://hal.sorbonne-universite.fr/hal-00751481
https://hal.sorbonne-universite.fr/hal-00751481
Publikováno v:
IEICE Transactions on Electronics
IEICE Transactions on Electronics, Institute of Electronics, Information and Communication Engineers, 2012, E95-C, pp.1348-1353. ⟨10.1587/transele.E95.C.1348⟩
IEICE Transactions on Electronics, 2012, E95-C, pp.1348-1353. ⟨10.1587/transele.E95.C.1348⟩
IEICE Transactions on Electronics, Institute of Electronics, Information and Communication Engineers, 2012, E95-C, pp.1348-1353. ⟨10.1587/transele.E95.C.1348⟩
IEICE Transactions on Electronics, 2012, E95-C, pp.1348-1353. ⟨10.1587/transele.E95.C.1348⟩
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::774860fce3389a6282e28c813077a52f
https://hal.archives-ouvertes.fr/hal-00790415
https://hal.archives-ouvertes.fr/hal-00790415
Publikováno v:
IEICE Transactions on Electronics
IEICE Transactions on Electronics, 2012, E95-C, pp.1363-1368. ⟨10.1587/transele.E95.C.1363⟩
IEICE Transactions on Electronics, Institute of Electronics, Information and Communication Engineers, 2012, E95-C, pp.1363-1368. ⟨10.1587/transele.E95.C.1363⟩
IEICE Transactions on Electronics, 2012, E95-C, pp.1363-1368. ⟨10.1587/transele.E95.C.1363⟩
IEICE Transactions on Electronics, Institute of Electronics, Information and Communication Engineers, 2012, E95-C, pp.1363-1368. ⟨10.1587/transele.E95.C.1363⟩
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0062636f7cc4780944ad3d96d58fd26
https://hal.science/hal-00790414
https://hal.science/hal-00790414
Autor:
Didier Decoster, Laurence Considine, Irma Saraswati, Yong-Hoon Cho, Suk-Min Ko, Wigajatri P Retno, D. Pavlidis, Nr. Poepawati, El Hadj Dogheche
Publikováno v:
Proceedings of 2012 Photonics Global Conference, PGC 2012
Photonics Global Conference, PGC 2012
Photonics Global Conference, PGC 2012, 2012, Sentosa, Singapore. pp.1-5, ⟨10.1109/PGC.2012.6458110⟩
Photonics Global Conference, PGC 2012
Photonics Global Conference, PGC 2012, 2012, Sentosa, Singapore. pp.1-5, ⟨10.1109/PGC.2012.6458110⟩
A good justification for gallium nitride on silicone is the potential for integrated optoelectronic circuits and for the low cost bring by growth of GaN on a large size wafers. Actually, the application interest for GaN/Si is power electronics. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0a480829b0bd3fe2ce7429708e18358
https://hal.archives-ouvertes.fr/hal-00801116
https://hal.archives-ouvertes.fr/hal-00801116
Publikováno v:
68th Device Research Conference.
Zinc oxide (ZnO) is a direct bandgap (E g = 3.36 eV) semiconductor with a large exciton binding energy (60 meV), exhibiting near UV emission, transparent conductivity and piezoelectricity. It also has comparable to GaN high saturation velocity and be
Autor:
Paul Thomas, Koen Jacobs, Zahia Bougrioua, Adam R. Boyd, Nikhil Sharma, Ted Thrush, Jan Cheyns, Laurence Considine, Colin J. Humphreys, D. M. Tricker, Ingrid Moerman
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2001, 230 (3-4), pp.438-441. ⟨10.1016/S0022-0248(01)01252-0⟩
Journal of Crystal Growth, Elsevier, 2001, 230 (3-4), pp.438-441. ⟨10.1016/S0022-0248(01)01252-0⟩
International audience; High power LEDs fabricated from InGaN/GaN layers have received much research interest. Hence, in this paper we identify structural and chemical defects resulting from the epitaxial growth of these layers, which directly effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f58cb90b2e65afc7254bd0c30f6949c7
https://hal.archives-ouvertes.fr/hal-02906508
https://hal.archives-ouvertes.fr/hal-02906508
Autor:
Dimitris Pavlidis, Anatoli Evtukh, Ravi Joshi, Vladimir Litovchenko, Hidenori Mimura, Oktay Yilmazoglu, Mykola Semenenko, Jörg J. Schneider, Laurence Considine, Hans L. Hartnagel
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30:042203
Polarized multilayer AlN/GaN heterostructures were grown, processed and characterized for resonant electron emission. Diodes of this type have extremely high resonant tunneling voltages of >5 V, which is important for a vacuum independent (up to atmo
Publikováno v:
MRS Proceedings. 75
The thin film growth of PbTiO3 by MOCVD has been investigated using both a pyrolytic process and a sputter assisted plasma deposition process. In the first process, lead tertiary butoxide and titanium iso-propoxide are introduced to a low pressure re