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pro vyhledávání: '"Laurence Allirand"'
Autor:
Joao Oliveira, Jean-Michel Reynes, Hervé Morel, Pascal Frey, Olivier Perrotin, Laurence Allirand, Stéphane Azzopardi, Michel Piton, Fabio Coccetti
Publikováno v:
Energies, Vol 17, Iss 21, p 5476 (2024)
The short-circuit (SC) immunity of power silicon carbide (SiC) MOSFETs is critical for high-reliability applications, where robust monitoring and protection strategies are essential to ensure system safety. Despite their superior voltage blocking cap
Externí odkaz:
https://doaj.org/article/2147a465af7b4cda8d50b1cec018d707
Autor:
Marise Bafleur, Gérard Sarrabayrouse, Bernard Despax, Dominique Brosset, Jean Beluch, Jean-Luc Fay, Laurence Allirand
Publikováno v:
Japanese Journal of Applied Physics. 38:5012
Isolation area, obtained by local oxidation of silicon (LOCOS) without field implant, naturally shows a high sensitivity of the leakage current to fixed charges in metal oxide semiconductor (MOS) parasitic transistors. It has been shown that during t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bff9e2008509019d3b668e39dfb6074
https://doi.org/10.1143/jjap.38.5012
https://doi.org/10.1143/jjap.38.5012