Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Laura Mauer"'
Publikováno v:
Neuropsychology Review. 30:499-520
Impulsivity is a multi-faceted construct that underpins various mental health disorders. Impulsive behavior exacts a substantial health and economic burden, hence the importance of developing specific interventions to target impulsivity. Two forms of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bcaeeef179efb9ec0706cd9b1e333e7
https://doi.org/10.1007/s11065-020-09456-2
https://doi.org/10.1007/s11065-020-09456-2
Publikováno v:
Visuomenės sveikata. 28:51-56
Several of the disorders categorised in the Diagnostic and Statistical Manual of Mental Disorders (DSM-5) are marked by impulsivity, including borderline and antisocial personality disorders, attention deficit hyperactivity disorder, conduct disord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec24dc8f3b97a792ff221215b1328283
https://doi.org/10.5200/sm-hs.2018.050
https://doi.org/10.5200/sm-hs.2018.050
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2017:1-26
Driven largely by the growing need for more data, increased functionality, and faster speeds, consumer electronic devices have sparked a revolution in IC design. As it becomes increasingly more expensive and technically challenging to scale down semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e51aa1b05011ac63898bf96353f34c4
https://doi.org/10.4071/2017dpc-wp2_presentation1
https://doi.org/10.4071/2017dpc-wp2_presentation1
Publikováno v:
International Symposium on Microelectronics. 2016:000463-000468
A wet silicon etch chemistry and a process using the chemistry as a simple and cost-effective alternative to the polish/plasma etch silicon thinning process are presented in this paper. The new etch chemistry improves the Si etch rate over traditiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1119e5d39e0b2cdd3689ee6b1d65ef1
https://doi.org/10.4071/isom-2016-tha41
https://doi.org/10.4071/isom-2016-tha41
Publikováno v:
2018 International Wafer Level Packaging Conference (IWLPC).
Temporary bonding is used for many applications in Advanced Packaging and Microelectromechanical Systems (MEMS). Device wafers are bonded to a carrier wafer with a temporary bonding material in order to perform subsequent backside processing without
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1855388e144c92a1414ce52505fbc43
https://doi.org/10.23919/iwlpc.2018.8573269
https://doi.org/10.23919/iwlpc.2018.8573269
Autor:
Mike Phenis, Richie Peters, Kimberly Dona Pollard, Ramey Youssef, Meng Guo, John Taddei, John Clark, Laura Mauer
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:001435-001469
The continuing challenge to meet the need for lighter, smaller, faster and smarter electronic systems has pushed the advancement of 2.5D and 3D technology. The ability to create and integrate through-silicon vias (TSV) into device designs in 2.5- and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9b03d552cc2223b8e281ebe6b6017d3
https://doi.org/10.4071/2014dpc-wp12
https://doi.org/10.4071/2014dpc-wp12
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2013:000811-000840
Spin-coating is an important processing technique used in several industries, whereby a centrifugal force is used to produce a uniform thickness of fluid material on a rotating surface. In particular, spin-coating is being used throughout the electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52d2c40ca36881fd9b5fb15ae37b51e2
https://doi.org/10.4071/2013dpc-tp23
https://doi.org/10.4071/2013dpc-tp23
Autor:
John Clark, John Taddei, Michael Hatzistergos, Kenji Nulman, Laura Mauer, Stephen Olson, Victor Vartanian
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC).
Deep Reactive Ion Etch (DRIE) processes used to form Through Silicon Vias (TSVs) achieve high aspect ratios by depositing polymer on the vertical sidewalls of the features. This polymer material must be removed before other materials (including diele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6343adc4a500aaa83fb5423fad26f558
https://doi.org/10.1109/ectc.2016.383
https://doi.org/10.1109/ectc.2016.383
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:001673-001700
3D Integration is becoming a reality in device manufacturing. The TSV Middle process is becoming the dominant integration scenario. For this process flow the silicon wafer needs to be thinned to reveal the Cu TSV. Grinding is used to remove the bulk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5642d9b6b47c5b0f70bc14dec71d4c6
https://doi.org/10.4071/2012dpc-wp11
https://doi.org/10.4071/2012dpc-wp11
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2011:001596-001620
3D integration is the most active methodology for increasing device performance. The ability to create Through Silicon Vias (TSV) provides the shortest path for interconnections and will result in increased device speed and reduced package footprint.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::610e5796a2646a5ab82a29cabd0e1a4c
https://doi.org/10.4071/2011dpc-wp14
https://doi.org/10.4071/2011dpc-wp14