Zobrazeno 1 - 8
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pro vyhledávání: '"Laura L. Tedder"'
Autor:
James Humphrey, Harpreet Behl, Laura L. Tedder, M. Lightner, Sandeep Karandikar, Roberto Gonzalez, John Wilbanks, Murray Gordon, H. Scott Hinton, Paul Smith
Publikováno v:
Journal of Engineering Education. 90:513-518
This paper describes a technology-enhanced learning environment for an undergraduate course on Optical Fiber Communications (http:ctle.colorado.edunsf2000).
Publikováno v:
Journal of Applied Physics. 69:7037-7049
The adsorption and reaction of tetraethoxysilane (TEOS) with hydroxylated SiO2 has been studied over the range of 100–450 K using transmission infrared spectroscopy. At 100 K, TEOS [Si(OC2H5)4] condenses on SiO2. Upon warming in vacuum, some of the
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:1002-1006
The dissociative adsorption of tetraethoxysilane (TEOS) on SiO2 and the subsequent decomposition of the resulting siloxane species has been studied using Fourier transform infrared transmission spectroscopy. The adsorption and decomposition processes
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1864-1870
The reactive adsorption and decomposition of tetraethoxysilane is compared on Si(100) and SiO2 surfaces. The adsorption and decomposition behavior is compared to that observed for ethanol adsorption on both these surfaces. Tetraethoxysilane and ethan
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :1097-1104
The dissociative adsorption and thermal decomposition of tetraethoxysilane, TEOS, has been studied on Si(1OO) and SiO2. TEOS reacts with either surface at elevated temperatures to produce a mixture of di- and triethoxysiloxanes. These intermediates d
Publikováno v:
Applied Physics Letters. 62:699-701
The effect of phosphorous incorporation on the deposition rate of phosphosilicate glass from the reaction of PH3, O2, and tetraethoxysilane (TEOS) has been studied. The previously reported apparent catalytic effect of PH3 on the deposition rate of Si
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Conference
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