Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Laura Bégon-Lours"'
Autor:
Laura Bégon‐Lours, Stefan Slesazeck, Donato Francesco Falcone, Viktor Havel, Ruben Hamming‐Green, Marina Martinez Fernandez, Elisabetta Morabito, Thomas Mikolajick, Bert Jan Offrein
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract In artificial neural networks, the “synaptic weights” connecting the neurons are adjusted during the training. Beyond silicon, functionalizing the back‐end‐of‐line (BEOL) of CMOS circuits with novel materials is a key enabler for d
Externí odkaz:
https://doaj.org/article/cc53c747321341ec83b40a6a337fe156
Publikováno v:
Frontiers in Materials, Vol 11 (2024)
Analog neuromorphic circuits use a range of volatile and non-volatile memristive effects to mimic the functionalities of neurons and synapses. Creating devices with combined effects is important for reducing the footprint and power consumption of neu
Externí odkaz:
https://doaj.org/article/39d541541c4943d886b387c68b047d27
Autor:
Mattia Halter, Laura Bégon-Lours, Marilyne Sousa, Youri Popoff, Ute Drechsler, Valeria Bragaglia, Bert Jan Offrein
Publikováno v:
Communications Materials, Vol 4, Iss 1, Pp 1-8 (2023)
Brain-inspired neuromorphic computing is a key technology for processing an ever-growing amount of data. Here, an artificial synapse with dual resistance modulation mechanisms is demonstrated, achieving a dynamic range of 60, an endurance exceeding 1
Externí odkaz:
https://doaj.org/article/8f4acd7863994ad7a59123d6dd57de55
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Nikitas Siannas, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou, Laura Bégon-Lours, Cosmin Istrate, Lucian Pintilie, Athanasios Dimoulas
Publikováno v:
Communications Physics, Vol 5, Iss 1, Pp 1-10 (2022)
HfO2-based ferroelectric materials have immense technological potential and so significant attention has been given to improve the ferroelectric properties at low-thickness. Here, using Landau Devonshire theory, the authors show the origin of pinched
Externí odkaz:
https://doaj.org/article/d8003fbe4f6f46ef83a1d175ce3b83cc
Publikováno v:
Frontiers in Nanotechnology, Vol 4 (2022)
The quasistatic and transient transfer characteristics of Hf0.57Zr0.43O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with a WOx channel are investigated using a 2-D time-dependent Ginzburg-Landau model as implemented in a state-of-the
Externí odkaz:
https://doaj.org/article/70b53b6b0dfa479c80c604e44639e2f8
Due to the voltage driven switching at low to moderate voltages combined with a nonvolatile behavior of the achieved polarization state, ferroelectric materials have a unique potential for a wide class of low power nonvolatile electronic devices. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af1bfe0d3ae1639877d35e6e4d0439e5
https://zenodo.org/record/8115823
https://zenodo.org/record/8115823
Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
Autor:
Laura Bégon‐Lours, Mattia Halter, Francesco Maria Puglisi, Lorenzo Benatti, Donato Francesco Falcone, Youri Popoff, Diana Dávila Pineda, Marilyne Sousa, Bert Jan Offrein
Publikováno v:
Advanced Electronic Materials, 8 (6)
Ohmic, memristive synaptic weights are fabricated with a back-end-of-line compatible process, based on a 3.5 nm HfZrO4 thin film crystallized in the ferroelectric phase at only 400 degrees C. The current density is increased by three orders of magnit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3de38a36abf7e33fecaff120d5f21940
https://hdl.handle.net/20.500.11850/538271
https://hdl.handle.net/20.500.11850/538271
Publikováno v:
Frontiers in Electronic Materials. 2
Building Artificial Neural Network accelerators by implementing the vector-matrix multiplication in the analog domain relies on the development of non-volatile and tunable resistances. In this work, we describe the nanofabrication of a three-dimensio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf80ca7336458c25895162079d132ccc
https://doi.org/10.3389/femat.2022.849879
https://doi.org/10.3389/femat.2022.849879
Autor:
Laura Bégon-Lours, Mattia Halter, Marilyne Sousa, Youri Popoff, Diana Dávila Pineda, Donato Francesco Falcone, Zhenming Yu, Steffen Reidt, Lorenzo Benatti, Francesco Maria Puglisi, Bert Jan Offrein
Publikováno v:
Neuromorphic Computing and Engineering, 2 (2)
Two-terminal ferroelectric synaptic weights are fabricated on silicon. The active layers consist of a 2 nm thick WOx film and a 2.7 nm thick HfZrO4 (HZO) film grown by atomic layer deposition. The ultra-thin HZO layer is crystallized in the ferroelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a5e45d11a924af37e3591f37b0c7d7e
https://hdl.handle.net/11380/1274598
https://hdl.handle.net/11380/1274598