GENL: An extensible fitting program for Laue oscillations

Autor: Ravensburg, Anna L., Bylin, Johan, Pálsson, Gunnar K., Kapaklis, Vassilios

GenL is a flexible program that can be used to simulate and/or fit x-ray diffraction data from epitaxial thin films exhibiting Laue oscillations. It utilizes differential evolution within a genetic algorithm for the fitting of data and is based on th

Externí odkaz: http://arxiv.org/abs/2310.13539

Extracting information from X-ray diffraction patterns containing Laue oscillations

Autor: Aaron M. Miller, Mellie Lemon, Marisa A. Choffel, Sarah R. Rich, Fischer Harvel, David C. Johnson

Publikováno v: Zeitschrift für Naturforschung B. 77:313-322

The presence of Laue oscillations in a film grown on a solid surface is broadly taken as indicating a high quality, crystallographically aligned film of the targeted compound. In this paper we briefly review the origins of both Laue oscillations and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9632fea9733135a8b2fed0e1147af5f2
https://doi.org/10.1515/znb-2022-0020

High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Autor: Federica Bondino, Martin Hulman, Peter Hutár, Edmund Dobročka, Roman Stoklas, Lenka Pribusová Slušná, M. Sojková, Frans Munnik, Igor Píš, Valéria Tašková

Publikováno v: Applied Surface Science
Applied Surface Science 538(2021), 147936
Applied surface science 538 (2021). doi:10.1016/j.apsusc.2020.147936
info:cnr-pdr/source/autori:Sojkova, Michaela; Dobrocka, Edmund; Hutar, Peter; Taskova, Valeria; Slusna, Lenka Pribusova; Stoklas, Roman; Pis, Igor; Bondino, Federica; Munnik, Frans; Hulman, Martin/titolo:High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization/doi:10.1016%2Fj.apsusc.2020.147936/rivista:Applied surface science/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume:538

Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cddbe9c9d55c61ccbafbe5afef7a3393

Molecular beam epitaxy growth and doping modulation of topological semimetal NiTe2.

Autor: Zhang, Liguo, Zhao, Dapeng, Liu, Xiangyang, Lai, Junwen, Ren, Junhai, Wang, Qin, Lin, Haicheng, Sun, Yan, Tanigaki, Katsumi

Publikováno v: Applied Physics Letters; 7/29/2024, Vol. 125 Issue 5, p1-6, 6p

Silicon loss metrology using synchrotron x-ray reflectance and Bragg diffraction.

Autor: Bhargava, Mansi^1,2, Donner, Wolfgang³, Srivastava, Aseem⁴, Wolfe, John C.^1,2

Publikováno v: AIP Conference Proceedings. 9/26/2007, Vol. 931 Issue 1, p196-200. 5p. 2 Charts, 6 Graphs.