High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

Autor: Wang G; Department of Chemistry, Rice University, 6100 Main Street, Houston, Texas 77005, USA; Smalley Institute for Nanoscale Science and Technology, Rice University, 6100 Main Street, Houston, Texas 77005, USA., Lauchner AC, Lin J, Natelson D, Palem KV, Tour JM

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2013 Sep 14; Vol. 25 (34), pp. 4789-93. Date of Electronic Publication: 2013 Jul 08.