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Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs

Autor: Hsu, C.T ^*, Lau, M.M, Yeow, Y.T

Publikováno v: In Microelectronics Reliability 2001 41(2):201-209

Investigation of hot-carrier induced interface damages via small-signal characteristics of drain-to-substrate gated-diode.

Autor: Lau, M.M., Hsu, C.T., Yeow, Y.T.

Publikováno v: Proceedings of the 2001 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548); 2001, p249-253, 5p

Investigation of LDD n-MOSFET hot-carrier degradation with high gate-to-drain transverse field stressing at cryogenic temperature.

Autor: Hsu, C.T., Lau, M.M., Yeow, Y.T.

Publikováno v: COMMAD 2000 Proceedings Conference on Optoelectronic & Microelectronic Materials & Devices; 2000, p157-160, 4p

Measurement of V/sub T/ and L/sub eff/ using MOSFET gate-substrate capacitance.

Autor: Lau, M.M., Chiang, C.Y.T., Yeow, Y.T., Yao, Z.Q.

Publikováno v: ICMTS 1999 Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat No99CH36307); 1999, p152-155, 4p