Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Lasse Södergren"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:3762-3767
In0.71Ga0.29As/InP (12/2 nm) quantum well MOSFETs using sacrificial amorphous silicon (a:Si) spacers to achieve low parasitic capacitance are fabricated. Radio frequency characterization of 73 devices is used to study the intrinsic and extrinsic capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c61858a609eb31472a5638ee3c30d85
https://doi.org/10.1109/ted.2021.3092299
https://doi.org/10.1109/ted.2021.3092299
Publikováno v:
Nano letters. 22(10)
In current quantum computers, most qubit control electronics are connected to the qubit chip inside the cryostat by cables at room temperature. This poses a challenge when scaling the quantum chip to an increasing number of qubits. We present a later
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfb962a3c44cd605254b3dc878157ffd
https://pubmed.ncbi.nlm.nih.gov/35549486
https://pubmed.ncbi.nlm.nih.gov/35549486
Autor:
Lasse Södergren, Heera Menon, Matthew J. Steer, Robin Athle, Iain G. Thayne, Jonas Johansson, Mattias Borg
Monolithic integration of III–V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8353b8ef7316711542abf6f87cf873ea
https://eprints.gla.ac.uk/233114/2/233114.pdf
https://eprints.gla.ac.uk/233114/2/233114.pdf
Publikováno v:
physica status solidi (a)
Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::575208a5662700fdb443cd1ecc2e0a50
https://doi.org/10.1002/pssa.202000720
https://doi.org/10.1002/pssa.202000720
Autor:
Yi Liu, Erik Lind, Fredrik Lindelow, S. Fatemeh Mousavi, Yen Po Liu, Lasse Södergren, Anders Mikkelsen, Rainer Timm
Publikováno v:
Applied Physics Letters. 117:163101
Laterally grown InxGa1-xAs nanowires (NWs) are promising candidates for radio frequency and quantum computing applications, which, however, can require atomic scale surface and interface control. This is challenging to obtain, not least due to ambien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8e478117ee7e24b61a5b4cc5ee92dd3
https://doi.org/10.1063/5.0021520
https://doi.org/10.1063/5.0021520
Publikováno v:
Semiconductor Science and Technology. 35:065015
We present a semi self-aligned processing scheme for III–V nanowire transistors with novel semiconductor spacers in the shape of Λ-ridges, utilising the effect of slow growth rate on {111}B facets. The addition of spacers relaxes the constraint on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b208ad459b1deb505884f38420bf746
https://doi.org/10.1088/1361-6641/ab8398
https://doi.org/10.1088/1361-6641/ab8398
Publikováno v:
Applied Physics Letters
In this work, we study the electron mobility of near surface metal organic vapor phase epitaxy-grown InGaAs quantum wells. We utilize Hall mobility measurements in conjunction with simulations to quantify the surface charge defect density. Buried qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e06630cf048030cbbd0763f157fdb6c