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Efficient simulation of potential energy operators on quantum hardware: a study on sodium iodide (NaI).

Autor: Laskar MR; IBM Research, Bangalore, India. m.rahaman93@ieee.org.; G. S. Sanyal School of Telecommunications, Indian Institute of Technology Kharagpur, Kharagpur, India. m.rahaman93@ieee.org., Bhattacharya A; Department of Chemistry, GITAM, Visakhapatnam, India., Dasgputa K; IBM Research, Bangalore, India. kalyand1@in.ibm.com.

Publikováno v: Scientific reports [Sci Rep] 2024 May 11; Vol. 14 (1), pp. 10831. Date of Electronic Publication: 2024 May 11.

Atomic Layer Deposited MgO: A Lower Overpotential Coating for Li[Ni 0.5 Mn 0.3 Co 0.2 ]O 2 Cathode.

Autor: Laskar MR; Department of Chemical and Biological Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States., Jackson DH; Department of Chemical and Biological Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States., Xu S; Department of Material Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States., Hamers RJ; Department of Chemistry, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States., Morgan D; Department of Material Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States., Kuech TF; Department of Chemical and Biological Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2017 Mar 29; Vol. 9 (12), pp. 11231-11239. Date of Electronic Publication: 2017 Mar 16.

Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.

Autor: Gupta P; Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India., Rahman AA; Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India., Subramanian S; Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India., Gupta S; Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.; UM-DAE Center for Excellence in Basic Sciences, Mumbai, India., Thamizhavel A; Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India., Orlova T; Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA., Rouvimov S; Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA., Vishwanath S; Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA., Protasenko V; Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA., Laskar MR; Department of Chemical and Biological Engineering, University of Wisconsin-Madison, USA., Xing HG; Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA., Jena D; Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA., Bhattacharya A; Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.

Publikováno v: Scientific reports [Sci Rep] 2016 Mar 30; Vol. 6, pp. 23708. Date of Electronic Publication: 2016 Mar 30.