Zobrazeno 1 - 10
of 226
pro vyhledávání: '"Lashkarev, G"'
Autor:
Shtepliuk, I, Khranovskyy, Volodymyr, Lashkarev, G, Khomyak, V., Lazorenko, V, Ievtushenko, A, Syväjärvi, Mikael, Jokubavicius, Valdas, Yakimova, Rositsa
We report the low-temperature (250 °C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current–voltage measurements showed a typical r
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-90901
Autor:
Del Pozo-Zamudio, O., Schwarz, S., Klein, J., Schofield, R. C., Chekhovich, E. A., Ceylan, O., Margapoti, E., Dmitriev, A. I., Lashkarev, G. V., Borisenko, D. N., Kolesnikov, N. N., Finley, J. J., Tartakovskii, A. I.
Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selen
Externí odkaz:
http://arxiv.org/abs/1506.05619
Autor:
Del Pozo-Zamudio, O., Schwarz, S., Sich, M., Akimov, I. A., Bayer, M., Schofield, R. C., Chekhovich, E. A., Robinson, B. J., Kay, N. D., Kolosov, O. V., Dmitriev, A. I., Lashkarev, G. V., Borisenko, D. N., Kolesnikov, N. N., Tartakovskii, A. I.
Publikováno v:
2D Materials, 2 (3), 035010 (2015)
Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materia
Externí odkaz:
http://arxiv.org/abs/1501.02214
Autor:
Ievtushenko, A., Karpyna, V., Eriksson, J., Tsiaoussis, I., Shtepliuk, I., Lashkarev, G., Yakimova, R., Khranovskyy, V.
Publikováno v:
In Superlattices and Microstructures May 2018 117:121-131
Autor:
Osinniy, V., Dybko, K., Jedrzejczak, A., Arciszewska, M., Dobrowolski, W., Story, T., Radchenko, M. V., Sichkovskiy, V. I., Lashkarev, G. V., Olsthoorn, S. M., Sadowski, J.
Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015
Externí odkaz:
http://arxiv.org/abs/cond-mat/0409659
Autor:
Ievtushenko, A., Khyzhun, O., Shtepliuk, I., Bykov, O., Jakieła, R., Tkach, S., Kuzmenko, E., Baturin, V., Karpenko, О., Olifan, O., Lashkarev, G.
Publikováno v:
In Journal of Alloys and Compounds 25 October 2017 722:683-689
Publikováno v:
In Superlattices and Microstructures July 2017 107:1-4
Autor:
Shtepliuk, I., Khranovskyy, V., Lashkarev, G., Khomyak, V., Ievtushenko, A., Tkach, V., Lazorenko, V., Timofeeva, I., Yakimova, R.
Publikováno v:
In Applied Surface Science 1 July 2013 276:550-557
Autor:
Shtepliuk, I., Khranovskyy, V., Lashkarev, G., Khomyak, V., Lazorenko, V., Ievtushenko, A., Syväjärvi, M., Jokubavicius, V., Yakimova, R.
Publikováno v:
In Solid State Electronics March 2013 81:72-77
Publikováno v:
In Journal of Luminescence October 2012 132(10):2643-2647