Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Lashkare, Sandip"'
Autor:
Meihar, Paritosh, Srinu, Rowtu, Lashkare, Sandip, Singh, Ajay Kumar, Mulaosmanovic, Halid, Deshpande, Veeresh, Dünkel, Stefan, Beyer, Sven, Ganguly, Udayan
In-memory computing on a reconfigurable architecture is the emerging field which performs an application-based resource allocation for computational efficiency and energy optimization. In this work, we propose a Ferroelectric MirrorBit-integrated fie
Externí odkaz:
http://arxiv.org/abs/2307.04705
Autor:
Patil, Shubham, Sharma, Anand, R, Gaurav, Kadam, Abhishek, Singh, Ajay Kumar, Lashkare, Sandip, Mohapatra, Nihar Ranjan, Ganguly, Udayan
Compact and energy-efficient Synapse and Neurons are essential to realize the full potential of neuromorphic computing. In addition, a low variability is indeed needed for neurons in Deep neural networks for higher accuracy. Further, process (P), vol
Externí odkaz:
http://arxiv.org/abs/2306.11640
Autor:
Ali, Md Hanif, Pandey, Adityanarayan, Srinu, Rowtu, Meihar, Paritosh, Patil, Shubham, Lashkare, Sandip, Ganguly, Udayan
Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect in sputter
Externí odkaz:
http://arxiv.org/abs/2304.12924
Autor:
Patil, Shubham, Sakhuja, Jayatika, Singh, Ajay Kumar, Biswas, Anmol, Saraswat, Vivek, Kumar, Sandeep, Lashkare, Sandip, Ganguly, Udayan
Energy-efficient real-time synapses and neurons are essential to enable large-scale neuromorphic computing. In this paper, we propose and demonstrate the Schottky-Barrier MOSFET-based ultra-low power voltage-controlled current source to enable real-t
Externí odkaz:
http://arxiv.org/abs/2304.08504
Autor:
Meihar, Paritosh, Srinu, Rowtu, Saraswat, Vivek, Lashkare, Sandip, Mulaosmanovic, Halid, Singh, Ajay Kumar, Dünkel, Stefan, Beyer, Sven, Ganguly, Udayan
HfO2-based Ferroelectric field-effect transistor (FeFET) has become a center of attraction for non-volatile memory applications because of their low power, fast switching speed, high scalability, and CMOS compatibility. In this work, we show an n-cha
Externí odkaz:
http://arxiv.org/abs/2304.03124
Autor:
Rowtu, Srinu, Meihar, Paritosh, Pandey, Adityanarayan, Ali, Md. Hanif, Lashkare, Sandip, Ganguly, Udayan
In this work, we report a high remnant polarization, 2Pr >70$\mu$C/cm$^2$ in thermally processed atomic layer deposited Hf0.5Zr0.5O2 (HZO) film on Silicon with NH3 plasma exposed thin TiN interlayer and Tungsten (W) as a top electrode. The effect of
Externí odkaz:
http://arxiv.org/abs/2212.05026
Autor:
Patil, Shubham, Pandey, Adityanarayan H, Bhunia, Swagata, Lashkare, Sandip, Laha, Apurba, Deshpande, Veeresh, Ganguly, Udayan
Publikováno v:
In Thin Solid Films 15 October 2024 806
Autor:
Patil, Shubham, Kumar, Sandeep, Pandey, Adityanarayan H, Bhunia, Swagata, Kamaliya, Bhaveshkumar, Sharma, Anand, Lashkare, Sandip, Mote, Rakesh G., Laha, Apurba, Deshpande, Veeresh, Ganguly, Udayan
Publikováno v:
In Thin Solid Films 30 March 2024 793
Modern semiconductors innovation has a strong relation to scale and skill. While India has a significant demand for semiconductors, it has a daunting challenge to create a semiconductor ecosystem. Yet, India has quietly come a long way. Starting with
Externí odkaz:
http://arxiv.org/abs/2011.11251
Autor:
Saraswat, Vivek, Prasad, Shankar, Khanna, Abhishek, Wagh, Ashwin, Bhat, Ashwin, Panwar, Neeraj, Lashkare, Sandip, Ganguly, Udayan
Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling perspective, the charge carrier DC current modeling of PCMO RRAM by drif
Externí odkaz:
http://arxiv.org/abs/2005.07398