Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Lars Vestling"'
Publikováno v:
Solid-State Electronics. 115:179-184
A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d86846285795a92011f6f277e23b466a
https://doi.org/10.1016/j.sse.2015.08.011
https://doi.org/10.1016/j.sse.2015.08.011
Publikováno v:
Solid-State Electronics. 97:59-65
Single- and polycrystalline silicon carbide (6H-SiC/poly-SiC) substrates were investigated regarding RF losses and crosstalk for their use in Si/SiC hybrid substrates. Such hybrid substrates would ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63a676abc3830e2d7506ab9d103c7968
https://doi.org/10.1016/j.sse.2014.04.030
https://doi.org/10.1016/j.sse.2014.04.030
Publikováno v:
IEEE Transactions on Electron Devices. 56:505-511
Small-signal and computational load-pull simulations are used to investigate the effect of substrate resistivity on efficiency in high-power operation of high-frequency silicon-on-insulator-LDMOS transistors. Identical transistors are studied on subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad85e0fe8fa4057b4e27f0e6ea01faf6
https://doi.org/10.1109/ted.2008.2011848
https://doi.org/10.1109/ted.2008.2011848
Publikováno v:
Solid-State Electronics. 53:86-94
In this paper a method for TCAD evaluation of RF-power transistors in highefficiency operation using harmonic loading is presented. The method is based on large signal timedomaincomputational load-pull. Active loads are used in the harmonic load-pull
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ff0cfd9b666540946e3193bf3b65955
https://doi.org/10.1016/j.sse.2008.10.005
https://doi.org/10.1016/j.sse.2008.10.005
Publikováno v:
Sensors and Actuators B: Chemical. 123:27-34
This paper investigates a novel quartz crystal microbalance (QCM) biosensor with a small and rectangular flow cell along with a correspondingly shaped crystal electrode. The sensor was evaluated ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54daed223e41aa06304e9960cf182df8
https://doi.org/10.1016/j.snb.2006.07.027
https://doi.org/10.1016/j.snb.2006.07.027
Publikováno v:
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.
A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. Br
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58975fd36e3414a5b2d987203f93a7e2
https://doi.org/10.1109/ulis.2015.7063766
https://doi.org/10.1109/ulis.2015.7063766
Publikováno v:
Solid-State Electronics. 48:789-797
High frequency substrate losses for RF MOSFETs are analyzed using numerical device simulation. The results show that losses in devices made on low resistivity substrate occur through the substrate while losses in devices made on high resistivity subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d72c48220678cea3a2ef740708d7547
https://doi.org/10.1016/j.sse.2003.12.005
https://doi.org/10.1016/j.sse.2003.12.005
Autor:
Tadeusz Gruszecki, H. Pettersson, M Andersson, Anders Hagfeldt, Lars Vestling, Gunaraja Thuraisingham, Robert Thunman, Mårten O. M. Edwards
Publikováno v:
Journal of Electroanalytical Chemistry. 565:175-184
The charge-discharge kinetics of electrochromic displays, based on porous nanostructured viologen-derivatized TiO2 films, were investigated by std. electrochem. techniques. Various display compns. and geometries were studied. Chronocoulometry data we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::307339959307b43171acf91aa9f92457
https://doi.org/10.1016/j.jelechem.2003.10.006
https://doi.org/10.1016/j.jelechem.2003.10.006
Modeling and characterization of capacitive coupling in trench-isolated structures on SOI substrates
Publikováno v:
Solid-State Electronics. 48:43-49
Trench isolation and SOI substrates have made is possible to integrated high voltage devices together with low voltage circuitry, due to the total galvanic isolation. However, the trenches and the buried oxide of the SOI substrate do affect the total
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8630ce30d484d19b5b978dc41680a06b
https://doi.org/10.1016/s0038-1101(03)00273-9
https://doi.org/10.1016/s0038-1101(03)00273-9
Publikováno v:
Microelectronic Engineering. 65:428-438
In this study a possible approach for improving breakdown voltage while maintaining fT for a MOSFET, is presented. In a conventional MOSFET process with LDD the S/D is implanted with a large tilt angle, which gives an asymmetry due to the shadowing e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4832d57db8c47428d0b7198e86308ffe
https://doi.org/10.1016/s0167-9317(03)00054-6
https://doi.org/10.1016/s0167-9317(03)00054-6