Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Lars Naehle"'
Autor:
Lars Hildebrandt, Florian Gerschuetz, Peter Fuchs, Lars Naehle, Wolfgang Zeller, Johannes Koeth
Publikováno v:
Sensors, Vol 10, Iss 4, Pp 2492-2510 (2010)
Recent years have shown the importance of tunable semiconductor lasers in optical sensing. We describe the status quo concerning DFB laser diodes between 760 nm and 3,000 nm as well as new developments aiming for up to 80 nm tuning range in this spec
Externí odkaz:
https://doaj.org/article/5f2ba4dbf3e24ce18223a2ac53acaccb
Autor:
Sven Gerhard, Lars Naehle, Bruno Jentzsch, Harald Koenig, Elisabeth Reiger, Urs Heine, Soenke Tautz, Christoph Eichler, Georg Bruederl, Teresa Wurm, Damir Borovac, Martin Behringer, Laura Kreiner, Mariel Jama, Norwin von Malm, Anne Balck, Markus Baumann, Volker Krause
Publikováno v:
Gallium Nitride Materials and Devices XVIII.
Autor:
Muhammad Ali, Georg Rossbach, Jelena Ristic, Bernhard Stojetz, Volker Krause, Lars Naehle, Matthias Peter, Markus Baumann, Georg Brüderl, Alfred Lell, Soenke Tautz, Uwe Strauss, Werner Bergbauer, John Brückner, Teresa Wurm, Anne Balck, Harald König, Urs Heine, Christoph Eichler, Sven Gerhard, André Somers, Jan Wagner
Publikováno v:
Novel In-Plane Semiconductor Lasers XVIII.
More and more applications are using GaN laser diodes. Visible blue laser devices are well established light sources for converter based business projection of several thousand Lumens. Additional laser-based concepts like near-to-eye projection push
Autor:
Marc Fischer, Pierre Grech, Yves Rouillard, Aurore Vicet, G. Narcy, Lars Naehle, Sofiane Belahsene, Guilhem Boissier, Johannes Koeth
Publikováno v:
IEEE Photonics Technology Letters
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2010, 22 (15), pp.1084-1086. ⟨10.1109/LPT.2010.2049989⟩
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2010, 22 (15), pp.1084-1086. ⟨10.1109/LPT.2010.2049989⟩
Type-I quantum-well laser diodes with an active region constituted of GaInAsSb-AlGaInAsSb are reported. Broad-area lasers have demonstrated a threshold current density of 255 A/cm2 at room temperature. Distributed-feedback lasers have been operated i
Publikováno v:
Imaging and Applied Optics Congress.
We describe the status quo concerning DFB laser diodes between 760 nm and 3400 nm as well as new developments aiming for up to 80 nm tuning range, high power and low linewidth in this spectral region.