Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Lars Hiller"'
Autor:
Nøkland, Arild, Eidnes, Lars Hiller
Supervised training of neural networks for classification is typically performed with a global loss function. The loss function provides a gradient for the output layer, and this gradient is back-propagated to hidden layers to dictate an update direc
Externí odkaz:
http://arxiv.org/abs/1901.06656
Autor:
N��kland, Arild, Eidnes, Lars Hiller
Supervised training of neural networks for classification is typically performed with a global loss function. The loss function provides a gradient for the output layer, and this gradient is back-propagated to hidden layers to dictate an update direc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::862492297ac5298db6156c58cf08844a
http://arxiv.org/abs/1901.06656
http://arxiv.org/abs/1901.06656
Autor:
Philip Dyhrfort, Teodor Svedung Wettervik, Fredrik Clausen, Per Enblad, Lars Hillered, Anders Lew?n
Publikováno v:
Neurotrauma Reports, Vol 4, Iss 1, Pp 25-40 (2023)
Cerebral protein profiling in traumatic brain injury (TBI) is needed to better comprehend secondary injury pathways. Cerebral microdialysis (CMD), in combination with the proximity extension assay (PEA) technique, has great potential in this field. B
Externí odkaz:
https://doaj.org/article/e0579ebfea86423c8657dee0b5079345
Publikováno v:
Materials Science Forum. :730-733
An anisotropic etching process for mesa structures using fluorinated plasma with hydrogen addition was developed in an electon cyclotron resonance setup. The evolution of the mesa morphology was studied in dependence on the gas composition, the appli
Autor:
Donat Josef As, R. M. Kemper, Jörg K. N. Lindner, Thomas Stauden, Lars Hiller, Martina Luysberg, Jörg Pezoldt, C. Mietze, D. Meertens
Publikováno v:
physica status solidi c. 11:265-268
We report for the first time on the growth of cubic AlN/GaN multi-quantum wells (MQWs) on pre-patterned 3C-SiC/Si (001) substrates. The sample structure consists of 10 periods of 2 nm c-AlN barriers with a 4 nm c-GaN layer in between, which were grow
Publikováno v:
physica status solidi c. 11:280-283
AlGaN/GaN heterostructures were grown on sapphire and alternatively on silicon substrates covered with a thin SiC layer by MOCVD. The side gated transistors were fabricated using electron beam lithography. The conductivity of the drain-source branch
Autor:
R. M. Kemper, Jörg K. N. Lindner, Thomas Niendorf, K. Duschik, Jörg Pezoldt, Hans Jürgen Maier, Lars Hiller, Donat Josef As, K. Tillmann, Thomas Stauden, D. Meertens
Publikováno v:
Journal of Crystal Growth. 378:291-294
We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure cubic GaN crystals with a low defect density on top of the post shaped 3C–SiC nanostructure
Publikováno v:
Materials Science Forum. :1119-1122
Heteroepitaxial AlGaN/GaN on SiC/Si pseudosubstrate was used to fabricate three-terminal junction devices. Narrow bar and wide bar type active regions were fabricated. The measurement at room temperature showed predicted nonlinear behavior (previousl
Publikováno v:
Materials Science Forum. :901-904
Anisotropic etching processes for mesa structure formation using fluorinated plasma atmospheres in an electron cyclotron resonance (ECR) plasma etcher were studied on Novasic substrates with 10 µm thick 3C-SiC(100) grown on Si(100). To achieve reaso