Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Lars Hiller"'
Autor:
Nøkland, Arild, Eidnes, Lars Hiller
Supervised training of neural networks for classification is typically performed with a global loss function. The loss function provides a gradient for the output layer, and this gradient is back-propagated to hidden layers to dictate an update direc
Externí odkaz:
http://arxiv.org/abs/1901.06656
Autor:
N��kland, Arild, Eidnes, Lars Hiller
Supervised training of neural networks for classification is typically performed with a global loss function. The loss function provides a gradient for the output layer, and this gradient is back-propagated to hidden layers to dictate an update direc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::862492297ac5298db6156c58cf08844a
http://arxiv.org/abs/1901.06656
http://arxiv.org/abs/1901.06656
Publikováno v:
Materials Science Forum. :730-733
An anisotropic etching process for mesa structures using fluorinated plasma with hydrogen addition was developed in an electon cyclotron resonance setup. The evolution of the mesa morphology was studied in dependence on the gas composition, the appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d13a5af4077205e80971d6635212de1
https://doi.org/10.4028/www.scientific.net/msf.778-780.730
https://doi.org/10.4028/www.scientific.net/msf.778-780.730
Autor:
Donat Josef As, R. M. Kemper, Jörg K. N. Lindner, Thomas Stauden, Lars Hiller, Martina Luysberg, Jörg Pezoldt, C. Mietze, D. Meertens
Publikováno v:
physica status solidi c. 11:265-268
We report for the first time on the growth of cubic AlN/GaN multi-quantum wells (MQWs) on pre-patterned 3C-SiC/Si (001) substrates. The sample structure consists of 10 periods of 2 nm c-AlN barriers with a 4 nm c-GaN layer in between, which were grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::283808edc81b91963239919337f6e6bc
https://doi.org/10.1002/pssc.201300292
https://doi.org/10.1002/pssc.201300292
Publikováno v:
physica status solidi c. 11:280-283
AlGaN/GaN heterostructures were grown on sapphire and alternatively on silicon substrates covered with a thin SiC layer by MOCVD. The side gated transistors were fabricated using electron beam lithography. The conductivity of the drain-source branch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c3a5527d5e5350fcceaf2e2e9eba008
https://doi.org/10.1002/pssc.201300298
https://doi.org/10.1002/pssc.201300298
Autor:
R. M. Kemper, Jörg K. N. Lindner, Thomas Niendorf, K. Duschik, Jörg Pezoldt, Hans Jürgen Maier, Lars Hiller, Donat Josef As, K. Tillmann, Thomas Stauden, D. Meertens
Publikováno v:
Journal of Crystal Growth. 378:291-294
We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure cubic GaN crystals with a low defect density on top of the post shaped 3C–SiC nanostructure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f61398f313b3c487ddc456a48ad29291
https://doi.org/10.1016/j.jcrysgro.2012.10.011
https://doi.org/10.1016/j.jcrysgro.2012.10.011
Publikováno v:
Materials Science Forum. :1119-1122
Heteroepitaxial AlGaN/GaN on SiC/Si pseudosubstrate was used to fabricate three-terminal junction devices. Narrow bar and wide bar type active regions were fabricated. The measurement at room temperature showed predicted nonlinear behavior (previousl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::454692f89432c4da0a82833faa14bf91
https://doi.org/10.4028/www.scientific.net/msf.740-742.1119
https://doi.org/10.4028/www.scientific.net/msf.740-742.1119
Publikováno v:
Materials Science Forum. :901-904
Anisotropic etching processes for mesa structure formation using fluorinated plasma atmospheres in an electron cyclotron resonance (ECR) plasma etcher were studied on Novasic substrates with 10 µm thick 3C-SiC(100) grown on Si(100). To achieve reaso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fedf8ebfec716f87f706bac46e6da8a4
https://doi.org/10.4028/www.scientific.net/msf.717-720.901
https://doi.org/10.4028/www.scientific.net/msf.717-720.901
Publikováno v:
Advanced Materials Research. 324:427-430
Three-terminal junction devices were realized in graphene grown heteroepitaxially on semiinsulating silicon carbide as well as in AlGaN/GaN heterostructures grown by MOCVD on sapphire containing a two dimensional electron gas. These nanoelectronic de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72b3b12e5f9065f9aebc721255d32ff6
https://doi.org/10.4028/www.scientific.net/amr.324.427
https://doi.org/10.4028/www.scientific.net/amr.324.427