Výsledky vyhledávání

Excellent uniformity on large diameter GaN on silicon LED wafer

Autor: Ashay Chitnis, Cheng-Yu Hu, Saad Murad, Wei-Sin Tan, Stephan Lutgen, Andrea Pinos, Atsushi Nishikawa, Lars Groh

Publikováno v: physica status solidi c. 11:624-627

We report on the crystal quality and on-wafer device performance of GaN-on-Si LED wafers grown by metalorganic chemical vapour deposition on Si(111) substrates. Average XRD FWHM of 343 arcsec and 456 arcsec for the 002 and 102 reflections, respective

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3c0a578444863a5e39a9f42b2904f01a
https://doi.org/10.1002/pssc.201300477

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GaN‐on‐Si wafers for HEMTs with high power‐driving capability

Autor: Ashay Chitnis, Cheng-Yu Hu, Wei-Sin Tan, Andrea Pinos, Takuma Yagi, Atsushi Nishikawa, Saad Murad, Lars Groh, Stephan Lutgen, Victor Sizov

Publikováno v: physica status solidi c. 11:945-948

By means of our patented strain engineering technology, we achieved high crystal quality and near zero wafer bow on our 150 mm GaN-on-Si wafers. To show the feasibility of our wafers for HEMTs with large gate periphery, we investigated the buffer bre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8e054a72bfa844ad5f5ac16b154c63fd
https://doi.org/10.1002/pssc.201300534

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Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon

Autor: Victor Sizov, Michael Krieger, Markus Sickmoeller, Lars Groh, Takuma Yagi, Stephan Lutgen, Saad Murad, Heiko B. Weber, Sebastian Roensch

Publikováno v: Materials Science Forum. :1180-1184

We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b260784c47cdca55e7b0db634d40c34c
https://doi.org/10.4028/www.scientific.net/msf.778-780.1180

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Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon

Autor: Victor Sizov, Stephan Lutgen, Michael Krieger, Lars Groh, Heiko B. Weber, Saad Murad, Takuma Yagi, Sebastian Roensch

Publikováno v: Materials Science Forum. :502-505

The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures bel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c85a7e09fdd9e8e056af0822eb587ecb
https://doi.org/10.4028/www.scientific.net/msf.740-742.502

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Characterization of AlGaInN layers using X-ray diffraction and fluorescence

Autor: Armin Dadgar, Lars Groh, Alois Krost, Jürgen Bläsing, C. Hums

Publikováno v: physica status solidi (b). 248:622-626

Quantum well structures for nitride-based LEDs are mainly grown in c-direction, whereby the quantum confined Stark-effect (QCSE) reduces the overlap of the electron and hole wave function and with it the internal quantum efficiency. The reason for th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b9572774559dba8b9348b9ec75812d7
https://doi.org/10.1002/pssb.201046418

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Highly Uniform Electroluminescence from 150 and 200 mm GaN-on-Si-Based Blue Light-Emitting Diode Wafers

Autor: Saad Murad, Wei-Sin Tan, Ashay Chitnis, Andrea Pinos, Cheng-Yu Hu, Stephan Lutgen, Lars Groh, Atsushi Nishikawa

Publikováno v: Applied Physics Express. 6:095502

We report on the on-wafer device characteristics of 150 and 200 mm GaN-on-Si-based blue LED wafers grown by metalorganic chemical vapor deposition on Si(111) substrates with electroluminescence at 447 nm. Excellent uniformity was achieved with standa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::887a4fce1a806903033cceaff9767657
https://doi.org/10.7567/apex.6.095502

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200-mm GaN-on-Si Based Blue Light-Emitting Diode Wafer with High Emission Uniformity

Autor: Stephan Lutgen, Atsushi Nishikawa, Lars Groh, William Solari

Publikováno v: Japanese Journal of Applied Physics. 52:08JB25

We investigated the emission wavelength uniformity of 200-mm GaN-on-Si based blue light-emitting diode (LED) wafer grown by metalorganic vapor phase epitaxy (MOVPE). The larger the Si substrate diameter becomes, the more difficult to obtain uniform d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a4fa180bbb5e23608058cc0ebde3081
https://doi.org/10.7567/jjap.52.08jb25

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