Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Lars Barzen"'
Autor:
Ann-Kathrin Kleinschmidt, Lars Barzen, Johannes Strassner, Christoph Doering, Henning Fouckhardt, Wolfgang Bock, Michael Wahl, Michael Kopnarski
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1783-1793 (2016)
Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is
Externí odkaz:
https://doaj.org/article/08c4ab3abe1f4c8092f9d3d388b5ce0c
Autor:
Ann-Kathrin Kleinschmidt, Lars Barzen, Wolfgang Bock, Michael Wahl, Henning Fouckhardt, Johannes Strassner, Michael Kopnarski, Christoph Doering
Publikováno v:
Applied Surface Science. 357:530-538
Reflectance anisotropy spectroscopy (RAS) can be used to monitor (reactive) ion etching (RIE) of semiconductor samples. We present results on the influence of the Cl2 content of the plasma gas on the RAS spectra during reactive ion etching. In a firs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba564616c3a05b72b4bee817c41338a9
https://doi.org/10.1016/j.apsusc.2015.09.040
https://doi.org/10.1016/j.apsusc.2015.09.040
Publikováno v:
Applied Surface Science. 328:120-124
Experimental results on the application of reflectance anisotropy spectroscopy (RAS) to the monitoring of (reactive) ion etching of monocrystalline semiconductor samples are described. To show the potential of this technique RAS signals collected dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0d0f390ea56d6f7e40f0935b962e744
https://doi.org/10.1016/j.apsusc.2014.12.038
https://doi.org/10.1016/j.apsusc.2014.12.038
Autor:
Lars Barzen, Johannes Strassner, Ann-Kathrin Kleinschmidt, Henning Fouckhardt, Christoph Doering
Publikováno v:
Optical Measurement Systems for Industrial Inspection X.
Reflectance anisotropy spectroscopy (RAS) allows for in-situ monitoring of reactive ion etching (RIE) of monocrystalline III-V semiconductor surfaces. Upon use of RAS the sample to be etched is illuminated with broad-band linearly polarized light und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350abe265c05fe3e9f4a6891b922b76a
https://doi.org/10.1117/12.2269708
https://doi.org/10.1117/12.2269708
Autor:
Joachim M. Hewer, Christine Merkert, Matthias Tombers, Gereon Niedner-Schatteburg, Lars Barzen
Publikováno v:
International Journal of Mass Spectrometry. :271-276
A dedicated ion trap served to investigate the reaction with benzene and benzene-d 6 under single collision conditions of size selected bimetallic cobalt platinum clusters Co n P t m ± in the size range n + m ≤ 8. Dehydrogenation by cationic cobal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439ab5ad4248dc004c8b644662be1b68
https://doi.org/10.1016/j.ijms.2012.09.008
https://doi.org/10.1016/j.ijms.2012.09.008
Publikováno v:
The journal of physical chemistry. A. 117(6)
Reactions under single collision conditions with benzene C(6)H(6) and with benzene-d(6) C(6)D(6) of size selected cationic cobalt clusters Co(n)(+) and of anionic cobalt clusters Co(n)(-) in the cluster size range n = 3-28 revealed that dehydrogenati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db8b0b80ff40fce602ecb9c4ac2c6570
https://pubmed.ncbi.nlm.nih.gov/23249308
https://pubmed.ncbi.nlm.nih.gov/23249308