Zobrazeno 1 - 10
of 806
pro vyhledávání: '"Lars, Samuelson"'
Autor:
Maryam Khalilian, Axel Persson, David Lindgren, Martin Rosén, Filip Lenrick, Jovana Colvin, B. Jonas Ohlsson, Rainer Timm, Reine Wallenberg, Lars Samuelson, Anders Gustafsson
Publikováno v:
Nano Select, Vol 3, Iss 2, Pp 471-484 (2022)
Abstract To improve the performance and efficiency of Al containing III‐Nitride‐based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects. The main sources of the disl
Externí odkaz:
https://doaj.org/article/c00109321a4d4b138fade2186126ef5f
Autor:
Sergey Lazarev, Young Yong Kim, Luca Gelisio, Zhaoxia Bi, Ali Nowzari, Ivan A. Zaluzhnyy, Ruslan Khubbutdinov, Dmitry Dzhigaev, Arno Jeromin, Thomas F. Keller, Michael Sprung, Anders Mikkelsen, Lars Samuelson, Ivan A. Vartanyants
Publikováno v:
Applied Sciences, Vol 11, Iss 20, p 9419 (2021)
Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially consider
Externí odkaz:
https://doaj.org/article/ec3484bcf85249899fb6e0bfbcdebf1a
Autor:
Zhaoxia Bi, Jovana Colvin, Anders Gustafsson, Rainer Timm, Reine Wallenberg, Bo Monemar, Mikael Björk, Lars Samuelson
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61c72e2dd4fb33956aa1dbf0a2dd1e2f
https://doi.org/10.1117/12.2649606
https://doi.org/10.1117/12.2649606
Autor:
Kento Ueda, Sadashige Matsuo, Hiroshi Kamata, Yosuke Sato, Yuusuke Takeshige, Kan Li, Lars Samuelson, Hongqi Xu, Seigo Tarucha
Publikováno v:
Physical Review Research, Vol 2, Iss 3, p 033435 (2020)
We report on half-integer Shapiro steps observed in a gate-tunable short ballistic InAs nanowire Josephson junction. We observed the Shapiro steps of the short ballistic InAs nanowire Josephson junction and found the half-integer steps in addition to
Externí odkaz:
https://doaj.org/article/76f351805ad646caa920d24a81e2e4f1
Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine
Autor:
Xijian Duan, Jingrui Ma, Wenda Zhang, Pai Liu, Haochen Liu, Junjie Hao, Kai Wang, Lars Samuelson, Xiao Wei Sun
Publikováno v:
ACS applied materialsinterfaces.
InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, the synthesis of InP QDs requires breakthroughs in low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd7ad2a887482db4f8c74b648fb18f2f
https://pubmed.ncbi.nlm.nih.gov/36574641
https://pubmed.ncbi.nlm.nih.gov/36574641
Autor:
David Lindgren, Filip Lenrick, Anders Gustafsson, Axel R. Persson, Lars Samuelson, Rainer Timm, Jovana Colvin, Reine Wallenberg, Maryam Khalilian, Martin Rosén, B. Jonas Ohlsson
Publikováno v:
Nano Select, Vol 3, Iss 2, Pp 471-484 (2022)
To improve the performance and efficiency of Al containing III‐Nitride‐based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects. The main sources of the dislocations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22edb8ef4c1fc0c09ba58499352b0cc3
https://doi.org/10.1002/nano.202100154
https://doi.org/10.1002/nano.202100154
Autor:
Enrique Barrigón, Giuliano Vescovi, Harry A. Atwater, Ingvar Åberg, Lars Samuelson, Michael D. Kelzenberg, Pilar Espinet-Gonzalez, Magnus T. Borgström, Yang Chen, Gaute Otnes, Don Walker, John V. Lloyd, Colin J. Mann
Publikováno v:
IEEE Journal of Photovoltaics. 10:502-507
Radiation hard thin-film solar cell technologies are necessary in order to achieve a step forward in the specific power of solar arrays for space applications. In this article, we analyze the degradation of nanowire (NW) solar cells under high energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bb06c776a78fcf1549fb158cac1c2cd
https://doi.org/10.1109/jphotov.2020.2966979
https://doi.org/10.1109/jphotov.2020.2966979
Publikováno v:
Chinese Physics B. 32:018103
Miniaturization of light-emitting diodes (LEDs) with sizes down to a few micrometers has become a hot topic in both academia and industry due to their attractive applications on self-emissive displays for high-definition televisions, augmented/mixed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f99200f5bae5876ce4ec9c2147be2974
https://doi.org/10.1088/1674-1056/aca9c2
https://doi.org/10.1088/1674-1056/aca9c2
Autor:
Mohammad Karimi, Bernd Witzigmann, Magnus T. Borgström, Zeng Xulu, Håkan Pettersson, Lars Samuelson
Publikováno v:
Nano Letters. 19:8424-8430
High-performance photodetectors operating in the near-infrared (0.75-1.4 μm) and short-wave infrared (1.4-3.0 μm) portion of the electromagnetic spectrum are key components in many optical systems. Here, we report on a combined experimental and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18e8214accfb78d4f498eac05c1dcec2
https://doi.org/10.1021/acs.nanolett.9b02494
https://doi.org/10.1021/acs.nanolett.9b02494
Autor:
Lars Samuelson
Publikováno v:
Gallium Nitride Materials and Devices XVI.
III-Nitride based light-emitting diodes based on InGaN active layers formed on GaN, are fine for the blue and green emitting LEDs. However, the large lattice mis-match between red-emitting active layers and the GaN substrate still limits the efficien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff5fa980c2ef755b10adc03d81df236c
https://doi.org/10.1117/12.2577547
https://doi.org/10.1117/12.2577547