Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Larry Witkowski"'
Autor:
James W Pomeroy, Jim Carroll, Feiyuan Yang, Martin Kuball, Thomas Gerrer, Daniel Francis, Marty Yarborough, Larry Witkowski, Michael J. Uren, Brian Loran
Publikováno v:
IEEE Transactions on Electron Devices. 68:1530-1536
Reliable operation of high power GaN amplifiers at maximum performance relies on the mutual optimization of several design parameters constrained by a defined thermal budget. On high thermal conductivity, substrates, such as SiC and diamond, undergo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::547b1f2965878cd69e501465c2738531
https://doi.org/10.1109/ted.2021.3061319
https://doi.org/10.1109/ted.2021.3061319
Autor:
Yongjie Cui, Catherine Lee, Kaizhong Gao, Yuepeng Zhang, Yunsong Xie, Pilla Subrahmanyam, Larry Witkowski, Shuoqi Chen, John N. Hryn, Andy Xie, Soack Yoon, Yu Cao, Edward Beam, Andrew Ketterson
Publikováno v:
IEEE Electron Device Letters. 40:1249-1252
We have designed and fabricated the first self-biased circulator operating in ${C}$ -band and monolithically integrated it with Qorvo’s GaN MMIC technology by embedding a FeNi-based magnetic nanowire composite (MNC) in a $100~\mu \text{m}$ thick Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::985dd7ae4924f0335a72fa82de383213
https://doi.org/10.1109/led.2019.2921090
https://doi.org/10.1109/led.2019.2921090
Publikováno v:
ECS Transactions. 80:945-952
In this paper, we will present the Qorvo's 90nm GaN technology imbedded within Qorvo's existing 3-Metal-Interconnect (3MI) MMIC process flow, for V/W-band high power amplifier (HPA) applications. By applying an advanced epitaxial material structure,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51384c591f36e60eb16e524ec5aef9ad
https://doi.org/10.1149/08010.0945ecst
https://doi.org/10.1149/08010.0945ecst
Autor:
Oleh Krutko, J. Hitt, Joe Delaney, Gary Burgin, J. Nelson, Larry Witkowski, Craig Steinbeiser, C. Suckling, Thomas Landon, Rached Hajji
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:2218-2228
A two-way symmetrical Doherty amplifier exhibiting 250 W saturated power has been developed using high-voltage HBT (HVHBT) GaAs technology biased at 28 V on the collector. Greater than 57% collector efficiency at 50 W (47 dBm) average output power ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c800a561965b5e62276b6afd28a87c12
https://doi.org/10.1109/jssc.2008.2004456
https://doi.org/10.1109/jssc.2008.2004456
Publikováno v:
ECS Meeting Abstracts. :1227-1227
In this paper, we will present the in-development of Qorvo’s 90nm GaN technology imbedded within Qorvo’s existing 3-Metal-Interconnect (3MI) MMIC process flow, to make active and passive devices fully compatible with state-of-the-art GaN MMIC pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39f3c50426a1922b545df9437299675b
https://doi.org/10.1149/ma2017-02/29/1227
https://doi.org/10.1149/ma2017-02/29/1227
Autor:
Oleh Krutko, Joe Delaney, Roger Branson, Thomas Landon, Larry Witkowski, Gary Burgin, Preston Page, Craig Steinbeiser, Rached Hajji
Publikováno v:
2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications.
A 2-way symmetrical Doherty amplifier achieving 600W saturated power has been developed using Generation 2 High-Voltage HBT (Gen 2 HVHBT) GaAs technology. In this paper we will show the development method used for this design work. From module optimi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c72717aaca891bcebf3e4022493634d
https://doi.org/10.1109/pawr.2012.6174910
https://doi.org/10.1109/pawr.2012.6174910
Autor:
Joe Delaney, Oleh Krutko, Preston Page, Larry Witkowski, Roger Branson, Craig Steinbeiser, Thomas Landon, Gary Burgin, Rached Hajji
Publikováno v:
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A two stage high power amplifier consisting of a 325W High Voltage HBT (HVHBT) Doherty final and a 20W LDMOS Doherty driver has been developed for use in wireless basestation applications. The lineup achieved greater than 54% PAE at 75W (48.77dBm) av
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa622b0fb2363deeabd16b4a4e4db7b
https://doi.org/10.1109/csics.2011.6062433
https://doi.org/10.1109/csics.2011.6062433
Autor:
Thomas Landon, Preston Page, Craig Steinbeiser, Craig Hall, Roger Branson, Larry Witkowski, Rached Hajji, Joe Delaney, Sam Wey, Oleh Krutko
Publikováno v:
2010 IEEE MTT-S International Microwave Symposium.
A new generation of High Voltage Heterojunction Bipolar Transistor (HVHBT) technology was developed for base station high power amplifiers and multi-stage driver amplifiers. This is an improved version of previously reported InGaP/GaAs HBT capable of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9f087ff6ee4643c8c20d81a35f1d053
https://doi.org/10.1109/mwsym.2010.5514775
https://doi.org/10.1109/mwsym.2010.5514775
Autor:
Larry Witkowski, M.A. Khan, M. Muir, Paul Saunier, Hua-Quen Tserng, J. W. Yang, H. Wang, Carrie-Anne Lee
Publikováno v:
Proceedings. IEEE Lester Eastman Conference on High Performance Devices.
AlGaN/GaN HEMTs have achieved record output power densities at microwave frequencies; however, reliability of these devices is still a major concern. In this paper, the results of DC and RF stress tests at several drain voltages of passivated 75 /spl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0498cfb97518e150fa30ae0f35739ac
https://doi.org/10.1109/lechpd.2002.1146785
https://doi.org/10.1109/lechpd.2002.1146785
Conference
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