Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Larry R. Hite"'
Publikováno v:
IEEE Transactions on Nuclear Science. 39:2121-2125
A novel SEU (single event upset) resistant SRAM (static random access memory) cell has been implemented in a 256 K SOI (silicon on insulator) SRAM that has attractive performance characteristics over the military temperature range of -55 to +125 degr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a7f9fad79070da288a3cf717bc86003
https://doi.org/10.1109/23.211411
https://doi.org/10.1109/23.211411
Autor:
C.C. Shen, Larry R. Hite, Gordon P. Pollack, E. Yee, Jeong-Mo Hwang, R. Rajgopal, H. Lu, L. Cohn, Theodore W. Houston
Publikováno v:
Workshop Record. 1994 IEEE Radiation Effects Data Workshop.
SOI technology and design combine to give a high performance radiation hardened 1M SRAM manufacturable at the 0.8 /spl mu/m technology node. Features include a nominal 23 ns access time and a worst case minimum Write pulse of less than 15 ns, along w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94d285bc6254a58c6d98f62e14993084
https://doi.org/10.1109/redw.1994.633028
https://doi.org/10.1109/redw.1994.633028
Autor:
A. Peterson, Gordon P. Pollack, W.E. Bailey, T.G.W. Blake, Larry R. Hite, M. Matloubiam, J. Liu, R. Sundaresan, Theodore W. Houston, P. Mei, H. Lu
Publikováno v:
IEEE SOS/SOI Technology Conference.
Summary form only given. The successful design and fabrication of a 64 K SRAM on SIMOX material is discussed. The advantage of the small junction area resulting from mesa isolation is most evident in the very low standby current. An impressively high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2df38c8f9663c0120c5e2b66b18675c
https://doi.org/10.1109/soi.1989.69803
https://doi.org/10.1109/soi.1989.69803
Autor:
Larry R. Hite, C.C. Shen, H. Lu, Gordon P. Pollack, E. Yee, R. Rajgopal, Theodore W. Houston, Yea-Dean Sheu, Jeong-Mo Hwang
Publikováno v:
Proceedings of 1993 IEEE International SOI Conference.
A 1-M bit SRAM with 0.8 um feature sizes has been successfully fabricated using SIMOX material. The advantages of SOI for low capacitance, latch-up immunity, and reduced collection charge for single events have been long recognized. The demonstration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67da1bfe116ea971615906c80e62c56a
https://doi.org/10.1109/soi.1993.344546
https://doi.org/10.1109/soi.1993.344546
Autor:
Thomas E. Tang, Thomas C. Holloway, T.G.W. Blake, Larry R. Hite, Roger A. Haken, Che-Chia Wei
Publikováno v:
IEEE Transactions on Electron Devices. 34:682-688
This paper reports on how the self-aligned titanium disilicide process, normally used to simultaneously reduce MOS gate and junction sheet resistances to less than 1 Ω/square, has been extended to provide a layer of local interconnect for VLSI CMOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c2ae5b307d3eedb8d593691ad9b4164
https://doi.org/10.1109/t-ed.1987.22980
https://doi.org/10.1109/t-ed.1987.22980
Autor:
H.W. Lam, C.-E. Chen, R.K. Hester, R. Sundaresan, B.-Y. Mao, Larry R. Hite, T.G.W. Blake, C. Slawinski, Mishel Matloubian
Publikováno v:
IEEE Transactions on Electron Devices. 33:1840-1841
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72cb7042432fc4f2a2fe4bad307c13fe
https://doi.org/10.1109/t-ed.1986.22763
https://doi.org/10.1109/t-ed.1986.22763
Autor:
H.E. Davis, Ashwin H. Shah, Roger A. Haken, Larry R. Hite, Pallab K. Chatterjee, C.D. Gosmeyer, Satwinder Malhi, R. Sundaresan, C.-E. Chen, S.S. Mahant-Shetti, R.V. Karnaugh, H.W. Lam, R.K. Hester, R.F. Pinizzotto
Publikováno v:
IEEE Transactions on Electron Devices. 31:1981-1981
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c664712867eddcffc56f15dea689acd3
https://doi.org/10.1109/t-ed.1984.21876
https://doi.org/10.1109/t-ed.1984.21876
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