Výsledky vyhledávání - "Larry B. Rowland"

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

Autor: Sujit Banerjee, Kevin Matocha, Kiran Chatty, Larry B. Rowland

Publikováno v: Materials Science Forum. :903-906

We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specifi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::39017fb32d49f6d36cacfc95fc0b72c7
https://doi.org/10.4028/www.scientific.net/msf.778-780.903

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Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance

Autor: Ed Kaminsky, J. L. Garrett, B.J. Edward, Richard Alfred Beaupre, J. Cook, Larry B. Rowland, A.F. Allen, J. Foppes, Ho-Young Cha, Jesse B. Tucker, James W. Kretchmer, A. Vertiatchikh, Goutam Koley, A. P. Zhang

Publikováno v: Journal of Electronic Materials. 32:437-443

The performances of silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs) fabricated on conventional V-doped semi-insulating substrates and new V-free semi-insulating substrates have been compared. The V-free 4H-SiC substrates

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fc059d54860f17761d5e3375d54767b6
https://doi.org/10.1007/s11664-003-0174-3

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Microwave power SiC MESFETs and GaN HEMTs

Autor: B.J. Edward, A.F. Allen, Richard Alfred Beaupre, J. L. Garrett, Jesse B. Tucker, A.P. Zhang, James W. Kretchmer, Larry B. Rowland, E.B. Kaminsky, J. Foppes

Publikováno v: Solid-State Electronics. 47:821-826

We have fabricated SiC metal semiconductor field effect transistors (MESFETs) with more than 60 W of output power at 450 MHz from single 21.6 mm gate periphery devices (2.9 W/mm) and 27 W of output power at 3 GHz from single 14.4 mm SiC MESFET device

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::75f3c1abac16e3c9aa09fe4ded4c40b1
https://doi.org/10.1016/s0038-1101(02)00396-9

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Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

Autor: V. Tilak, Ed Kaminsky, A. P. Zhang, J. C. Grande, Julie Teetsov, Larry B. Rowland, A. Vertiatchikh, L.F. Eastman

Publikováno v: Journal of Electronic Materials. 32:388-394

Device performance and defects in AlGaN/GaN high-electron mobility transistors (HEMTs) have been correlated. Surface depressions and threading dislocations, revealed by optical-defect mapping and atomic force microscopy (AFM), compromised the effecti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c017015ec0ff4c3555115c1def054d4e
https://doi.org/10.1007/s11664-003-0163-6

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Temperature-dependent electroluminescence in InGaN/GaN multiple-quantum-well light-emitting diodes

Autor: Larry B. Rowland, Steven Francis Leboeuf, H. Liu, Xian-An Cao

Publikováno v: Journal of Electronic Materials. 32:316-321

We present a comparative study on temperature dependence of electroluminescence (EL) of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with identical structure but different indium contents in the active region. For the ultraviole

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f7aa16d07c023d9c6f1556d1d64b3c9
https://doi.org/10.1007/s11664-003-0151-x

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Dislocation conversion in 4H silicon carbide epitaxy

Autor: S. Ha, Larry B. Rowland, Marek Skowronski, P. Mieszkowski

Publikováno v: ResearcherID

The propagation of basal plane dislocations from off-axis 4H silicon carbide substrates into the homo-epitaxial layers has been investigated using chemical etching, optical microscopy, and transmission electron microscopy (TEM). The etch pit densitie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b652f05c86310f0c09cdc78ad4160e1
https://doi.org/10.1016/s0022-0248(02)01706-2

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SiC materials-progress, status, and potential roadblocks

Autor: Larry B. Rowland, Adrian Powell

Publikováno v: Proceedings of the IEEE. 90:942-955

SiC materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::846b23f7ac9d91407fdf6f37b9484872
https://doi.org/10.1109/jproc.2002.1021560

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Stacking-fault formation and propagation in 4H-SiC PiN diodes

Autor: Jeffery B. Fedison, Larry B. Rowland, R. E. Stahlbush, Shao Ping Wang, Mohammad Fatemi, S. D. Arthur

Publikováno v: Journal of Electronic Materials. 31:370-375

Stacking-fault growth in SiC PiN diodes has been examined using light-emission imaging and stressing at 80 A/cm2 and 160 A/cm2. Dark areas in the emission develop because of stacking faults and the current capability of the diode drops. More detailed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::987cc5064e094adebf3783b22162311c
https://doi.org/10.1007/s11664-002-0085-8

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