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pro vyhledávání: '"Larina, N."'
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Autor:
Agarkov, D. A., Borik, M. A., Katrich, D. S., Larina, N. A., Kulebyakin, A. V., Lomonova, E. E., Milovich, F. O., Myzina, V. A., Popov, P. A., Ryabochkina, P. A., Tabachkova, N. Yu., Volkova, T. V.
Publikováno v:
Journal of Solid State Electrochemistry; Jun2024, Vol. 28 Issue 6, p1997-2000, 4p
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This paper presents data from first GPS measurements of global response of the ionosphere to solar flares of September 23, 1998 and July 29, 1999. The analysis used novel technology of a global detection of ionospheric effects from solar flares (GLOB
Externí odkaz:
http://arxiv.org/abs/physics/0007036
Akademický článek
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Autor:
Agarkov D; Osipyan Institute of Solid State Physics RAS, Academician Osipyan Str., 2, 142432 Chernogolovka, Russia.; Moscow Institute of Physics and Technology, Institusky Lane, 9, 141700 Doloprudny, Russia., Borik M; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Buzaeva E; Institute of High Technologies and New Materials, National Research Ogarev Mordovia State University, Bolshevistskaya Street, 68, 430005 Saransk, Russia., Korableva G; Osipyan Institute of Solid State Physics RAS, Academician Osipyan Str., 2, 142432 Chernogolovka, Russia., Kulebyakin A; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Kuritsyna I; Osipyan Institute of Solid State Physics RAS, Academician Osipyan Str., 2, 142432 Chernogolovka, Russia., Larina N; Institute of High Technologies and New Materials, National Research Ogarev Mordovia State University, Bolshevistskaya Street, 68, 430005 Saransk, Russia., Kyashkin V; Institute of High Technologies and New Materials, National Research Ogarev Mordovia State University, Bolshevistskaya Street, 68, 430005 Saransk, Russia., Lomonova E; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Milovich F; Department of Materials Science, Moscow Polytechnic University, Bolshaya Semyonovskaya Street, 38, 107023 Moscow, Russia.; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology «MISIS», Leninskiy Prospect, 4, 119049 Moscow, Russia., Myzina V; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Ryabochkina P; Institute of High Technologies and New Materials, National Research Ogarev Mordovia State University, Bolshevistskaya Street, 68, 430005 Saransk, Russia., Tabachkova N; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia.; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology «MISIS», Leninskiy Prospect, 4, 119049 Moscow, Russia., Zakharov D; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology «MISIS», Leninskiy Prospect, 4, 119049 Moscow, Russia.
Publikováno v:
Membranes [Membranes (Basel)] 2023 Aug 01; Vol. 13 (8). Date of Electronic Publication: 2023 Aug 01.
Akademický článek
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Autor:
Agarkov D; Osipyan Institute of Solid State Physics RAS, Academician Osipyan Str., 2, 142432 Chernogolovka, Moscow District, Russia.; Moscow Institute of Physics and Technology, Instituskiy per., 9, 141701 Doloprudny, Moscow District, Russia., Borik M; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Korableva G; Osipyan Institute of Solid State Physics RAS, Academician Osipyan Str., 2, 142432 Chernogolovka, Moscow District, Russia., Kulebyakin A; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Kuritsyna I; Osipyan Institute of Solid State Physics RAS, Academician Osipyan Str., 2, 142432 Chernogolovka, Moscow District, Russia., Larina N; Institute of High Technologies and New Materials, National Research Ogarev Mordovia State University, Bolshevistskaya Street, 68, 430005 Saransk, Russia., Lomonova E; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Milovich F; Department of Materials Science, Moscow Polytechnic University, Bolshaya Semyonovskaya Street, 38, 107023 Moscow, Russia.; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology «MISIS», Leninskiy Prospect, 4, 119049 Moscow, Russia., Myzina V; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Ryabochkina P; Institute of High Technologies and New Materials, National Research Ogarev Mordovia State University, Bolshevistskaya Street, 68, 430005 Saransk, Russia., Tabachkova N; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia.; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology «MISIS», Leninskiy Prospect, 4, 119049 Moscow, Russia., Volkova T; Institute of High Technologies and New Materials, National Research Ogarev Mordovia State University, Bolshevistskaya Street, 68, 430005 Saransk, Russia., Zakharov D; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology «MISIS», Leninskiy Prospect, 4, 119049 Moscow, Russia.
Publikováno v:
Membranes [Membranes (Basel)] 2023 Mar 09; Vol. 13 (3). Date of Electronic Publication: 2023 Mar 09.
Autor:
Borik M; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Kulebyakin A; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Kyashkin V; Institute of High Technologies and New Materials, National Research Ogarev Mordovia State University, Bolshevistskaya Street, 68, 430005 Saransk, Russia., Larina N; Institute of High Technologies and New Materials, National Research Ogarev Mordovia State University, Bolshevistskaya Street, 68, 430005 Saransk, Russia., Lomonova E; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Milovich F; Department of Materials Science, Moscow Polytechnic University, Bolshaya Semyonovskaya Street, 38, 107023 Moscow, Russia.; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology «MISIS», Leninskiy Prospect, 4, 119049 Moscow, Russia., Myzina V; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia., Nezhdanov A; Physics Department, National Research Lobachevsky State University of Nizhny Novgorod, Gagarin Prospect, 23, 603022 Nizhny Novgorod, Russia., Ryabochkina P; Institute of High Technologies and New Materials, National Research Ogarev Mordovia State University, Bolshevistskaya Street, 68, 430005 Saransk, Russia., Tabachkova N; Prokhorov General Physics Institute of Russian Academy of Sciences, Vavilova Street, 38, 119991 Moscow, Russia.; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology «MISIS», Leninskiy Prospect, 4, 119049 Moscow, Russia., Chernov E; Research and Production Enterprise JSC «ECON», Lesnaya Street, 9, 249037 Obninsk, Russia.
Publikováno v:
Materials (Basel, Switzerland) [Materials (Basel)] 2022 Nov 02; Vol. 15 (21). Date of Electronic Publication: 2022 Nov 02.